نتایج جستجو برای: carbon nanotube field
تعداد نتایج: 1054926 فیلتر نتایج به سال:
We experimentally investigate the effects of Co-60 irradiation on the electrical properties of single-walled carbon nanotube and graphene field-effect transistors. We observe significant differences in the radiation response of devices depending on their irradiation environment, and confirm that, under controlled conditions, standard dielectric hardening approaches are applicable to carbon nano...
We report a novel strategy to fabricate metal nanoparticle/carbon nanotube hybrids with unique plasmon properties as well as biocompatibility and further apply them as efficient dark field light scattering agents for cancer cell imaging.
In the past decade, semiconducting carbon nanotube thin films have been recognized as contending materials for wide-ranging applications in electronics, energy, and sensing. In particular, improvements in large-area flexible electronics have been achieved through independent advances in postgrowth processing to resolve metallic versus semiconducting carbon nanotube heterogeneity, in improved ga...
hydrogel nanocomposites based on alginate polysaccharide were prepared by graft copolymerization of acrylamide and itaconic acid in the presence of carbon nanotube, using methylene bisacrylamide and ammonium persulfate as crosslinker and initiator, respectively. the synthesized samples were characterized by infrared spectroscopy, thermogravimetric analysis and scanning electron microscopy. the ...
The quantum-mechanical orbitals in carbon nanotube quantum dots are doubly degenerate over a large number of states. We argue that this experimental observation indicates that electrons are reflected without mode mixing at the nanotube-metal contacts. Two electrons occupying a pair of degenerate orbitals “shell” are found to form a triplet state starting from zero magnetic field. Finally, we ob...
The AC performance capabilities of Schottky-barrier carbon nanotube field-effect transistors are examined via simulations using a self-consistent Schrödinger-Poisson solver. It is shown that good high-frequency performance demands use of a small-bandgap nanotube, whereas good digitalswitching performance can be achieved with larger-bandgap tubes. For typical transistor geometries it is shown th...
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