Hexagonal boron nitride (h-BN) has recently emerged as an excellent substrate for graphene nanodevices, owing to its atomically flat surface and its potential to engineer graphene's electronic structure. Thus far, graphene/h-BN heterostructures have been obtained only through a transfer process, which introduces structural uncertainties due to the random stacking between graphene and h-BN subst...

Securing a semiconducting bandgap is essential for applying graphene layers in switching devices. Theoretical studies have suggested a created bulk bandgap in a graphene layer by introducing an asymmetry between the A and B sub-lattice sites. A recent transport measurement demonstrated the presence of a bandgap in a graphene layer where the asymmetry was introduced by placing a graphene layer o...

Nuclear reactions initiated by laser-accelerated particle beams are a promising new approach to many applications, from medical radioisotopes to aneutronic energy production. We present results demonstrating the occurrence of secondary nuclear reactions, initiated by the primary nuclear reaction products, using multicomponent targets composed of either natural boron (B) or natural boron nitride...

The performance of field effect transistors comprised of a zigzag graphene nanoribbon that is symmetrically doped with boron nitride (BN) as a channel material, is numerically studied for the first time. The device merit for digital applications is investigated in terms of the on-, the off- and the on/off-current ratio. Due to the strong effect of the substrate roughness on the performance of g...

Biological ion channels in membranes are selectively permeable to specific ionic species. They maintain the resting membrane potential, generate propagated action potentials, and control a wide variety of cell functions. Here it is demonstrated theoretically that boron nitride nanotubes have the ability to carry out some of the important functions of biological ion channels. Boron nitride nanot...

Boron nitride ~BN! thin films ~containing mixed cBN/hBN phase! have been deposited on Si~100! substrates using neutralized nitrogen beam and electron beam evaporation of boron. All as-deposited BN films were p type with a room-temperature carrier concentration in the range of 5310 to 1310 cm. The Mg-doped BN films showed carrier concentrations in the range of 1.2 310 cm to 5.2310 cm when the Mg...

Stabilizations and atomic level quadrupole coupling constant (CQ) properties have been investigated for graphene–like monolayers (G–monolayers) of boron nitride (BN), boron phosphide (BP), aluminum nitride (AlN), and aluminum phosphide (AlP) structures. To this aim, density functional theory (DFT) calculations have been performed to optimize the model structures and also to evaluate the CQ para...

In the present study, free vibration behaviors of of carbon nanotube (CNT) and boron nitride nanotube (BNNT) have been investigated via Eringen’s nonlocal continuum theory. Size effect has been considered via nonlocal continuum theory. Nanotubes have become popular in the world of science thanks to their characteristic properties. In this study, free vibrations of Boron Nitride Nanotube (BNNT) ...

In this study interaction of phenothiazine sulfur dye with (5, 5) armchair open-end boron nitride nanotubes (BNNTs) in interaction (with a length of 7 Å) was investigated. The impacts of the estereoelectronic effect associated with donor-acceptor electron delocalizations, dipole-dipole interactions and total steric exchange energies on the structural and electronic properties and reactivity of ...

A corona discharge is used to create and store negative charge in the silicon nitride films of silicon dioxide/silicon nitride stacks. Effective lifetime measurements on both textured and planar, as well as both boron diffused and undiffused silicon samples passivated with silicon oxide/silicon nitride stacks, show that the creation of negative charge in the nitride layer results in an improvem...