A corona discharge is used to create and store negative charge in the silicon nitride films of silicon dioxide/silicon nitride stacks. Effective lifetime measurements on both textured and planar, as well as both boron diffused and undiffused silicon samples passivated with silicon oxide/silicon nitride stacks, show that the creation of negative charge in the nitride layer results in an improvem...

We present theoretical evidence, based on total-energy first-principles calculations, of the existence of spin-polarized states well localized at and extended along the edges of bare zigzag boron nitride nanoribbons. Our calculations predict that all the magnetic configurations studied in this work are thermally accessible at room temperature and present an energy gap. In particular, we show th...

Highly porous boron nitride nanosheets (BNNSs) were tested as a re-usable adsorbent for the removal of pharmaceuticals from aqueous solution. The BNNSs exhibit both unprecedentedly high adsorption capacities and excellent recyclability while maintaining their high adsorption capacity by a simple regeneration process. These advantages render BNNSs a promising material for water remediation appli...

We performed calculations of electronic, optical, and transport properties of graphene on hexagonal boron nitride with realistic moiré patterns. The latter are produced by structural relaxation using a fully atomistic model. This relaxation turns out to be crucially important for electronic properties. We describe experimentally observed features such as additional Dirac points and the "Hofstad...

High growth temperatures (>1100 degrees C), low production yield, and impurities have prevented research progress and applications of boron nitride nanotubes (BNNTs) in the past 10 years. Here, we show that BNNTs can be grown on substrates at 600 degrees C. These BNNTs are constructed of high-order tubular structures and can be used without purification. Tunneling spectroscopy indicates that th...

A direct and metal layer-free growth of flat graphene pads on exfoliated hexagonal boron nitride substrate (h-BN) are demonstrated by atmospheric chemical vapour deposition (CVD) process. Round shape with high flatness graphene pads are grown in high yield (∼95%) with a pad thickness of ∼0.5 nm and homogenous diameter.

The energetic and electronic properties of acetylenic-bond-interconnected hexagonal boron nitride sheets (BNyne), in which the number of rows of BN hexagonal rings (denoted as BN width) between neighboring arrays of acetylenic linkages increases consecutively, have been explored using first-principles calculations. Depending on the spatial position of B/N atoms with respect to the acetylenic li...

1 Device fabrication details.

We demonstrate that the one-dimensional (1D) transport channels that appear in the gap when graphene nanoroads are embedded in boron nitride (BN) sheets are more robust when they are inserted at AB/BA grain boundaries. Our conclusions are based on ab initio electronic structure calculations for a variety of different crystal orientations and bonding arrangements at the BN/C interfaces. This pro...