We have observed anomalous transport properties for a 50 nm Bi dot in the Coulomb-blockade regime. Over a range of gate voltages, Coulomb blockade peaks are suppressed at low bias, and dramatic structure appears in the current at higher bias. We propose that the state of the dot is determined self-consistently with the state of a nearby two-level system (TLS) to which it is electrostatically co...

We present the first in a series of microscopic studies of electrical transport through individual molecules with metallic contacts. We view the molecules as ‘‘heterostructures’’ composed of chemically well-defined atomic groups, and analyze the device characteristics in terms of the charge and potential response of these atomic groups to the perturbation induced by the metal-molecule coupling ...

Conduction characteristics of amorphous InGaZnO thin-film transistors were investigated by applying constant drain current with gate bias (V GS) modulation. Constant drain current in the off-current (I off) level from the transfer characteristic was applied to the drain electrode and the measured drain voltage with the gate bias sweep. The normalized channel conductance (G d) characteristics we...

A novel ultra-high compliance, low power, very accurate and high output impedance current output stage (COS) with extremely high output current drive capability is proposed in this paper. The principle of operation of this unique structure is discussed, its most important formulas are derived and its outstanding performance is verified by HSPICE simulation in TSMC 0.18µm CMOS, BSIM3, and Level4...

In this article, a fully integrated single photon detector including a silicon avalanche photodiode and a quenching circuit is presented. The low doping concentrations, inherent to the complementary metal–oxide–semiconductor ~CMOS! high-voltage technology used, favor the absorption of red and infrared photons at the depletion region. The detection probability rapidly increases with excess bias ...

In this paper a CMOS operational amplifier is presented which operates at 2V power supply and 1uA input bias current at 0.8 um technology using non conventional mode of operation of MOS transistors and whose input is depended on bias current. The unique behaviour of the MOS transistors in subthreshold region not only allows a designer to work at low input bias current but also at low voltage. W...

This paper presents Density Functional Theory and Non-Equilibrium Green’s Function based First Principles calculations to explore the sensing property of Adenine and Thymine based hetero-junction chins for Ammonia and Phosphine gas molecules. This modeling and simulation technique plays an important and crucial role in the fast growing semiconductor based nanotechnology field. The hetero-juncti...

We show that the vibrations of a nanomechanical resonator can be cooled to near its quantum ground state by tunneling injection of electrons from a scanning tunneling microscope tip. The interplay between two mechanisms for coupling the electronic and mechanical degrees of freedom results in a bias-voltage-dependent difference between the probability amplitudes for vibron emission and absorptio...