نتایج جستجو برای: algangan hemts
تعداد نتایج: 888 فیلتر نتایج به سال:
Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs
In this article, N-polar GaN-on-sapphire deep-recess metal–insulator–semiconductor (MIS)-high-electron-mobility transistors (HEMTs) with a breakthrough performance at ${W}$ -band are presented. Compared prior GaN MIS-HEMTs, thin cap l...
The goal of this paper is to provide a comparative analysis the thermal impact on microwave performance high electron-mobility transistors (HEMTs) based GaAs and GaN technologies. To accomplish challenging goal, relative sensitivity changes in ambient temperature determined by using scattering parameter measurements corresponding equivalent-circuit models. studied devices are two HEMTs with sam...
Nanoscale localized mechanical stress fields develop unavoidably in microelectronic devices due to structural and processing aspects. Their global average is too small influence bandgap or mobility, but we propose that localization can defect nucleation sites under radiation. This investigated on gallium nitride high electron mobility transistors (GaN HEMTs). Using transmission microscopy, spat...
In this paper, 650 V / 7.5 A rated enhancement-mode (E-mode) Gallium Nitride (GaN) high-electron-mobility-transistors (HEMTs) with integrated gate drivers are characterized under thousands of accelerated thermal cycles (ATC) at different junction temperature stresses. This research helps in developing fundamental insights into GaN HEMTs' aging characteristics through the degradation ten devices...
The nature of structural degradation in AlGaN/GaN high electron mobility transistors (HEMTs) are investigated in this work. Moisture from the environment and/or adsorbed water on the III-N surface were found to play an important role in the formation of surface pits during OFF-state electrical stress. The mechanism of this water-related structural degradation is explained by an electrochemical ...
This study presents the temperature dependence of small signal parameters of GaN/SiC HEMTs across the 0–150◦C range. The changes with temperature for transconductance (gm), output impedance (Cds and Rds), feedback capacitance (Cdg), input capacitance (Cgs), and gate resistance (Rg) are measured. The variations with temperature are established for gm, Cds, Rds, Cdg, Cgs, and Rg in the GaN techno...
Apart from other factors, band alignment led conduction offset (CBO) largely affects the two dimensional electron gas (2DEG) density ns in wide bandgap semiconductor based high mobility transistors (HEMTs). In context of assessing various performance metrics HEMTs, rational estimation CBO and maximum achievable 2DEG is critical. Here, we present an analytical study on effect different energy pa...
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