Increasing the thermal conductivity of PDMS (polydimethylsiloxane) based microfluidics is an important issue for the thermal management of hot spots produced by embedding electronic circuits in such systems. This paper presents a solution for enhancing the thermal conductivity of such PDMS based microfluidics by introducing thermally conductive alumina (Al2O3) nanoparticles, forming PDMS/Al2O3 ...

The utilization of the anodic TiO2 nanotube layers, with uniform Al2O3 coatings of different thicknesses (prepared by atomic layer deposition, ALD), as the new electrode material for lithium-ion batteries (LIBs), is reported herein. Electrodes with very thin Al2O3 coatings (∼1 nm) show a superior electrochemical performance for use in LIBs compared to that of the uncoated TiO2 nanotube layers. ...

The effect of submicron-sized Al2O3 particle addition on the crystal structure and superconducting properties of YBa2Cu3O7-δ ceramics was systematically studied. Series of YBa2Cu3O7−δ + x Al2O3 samples (x = 0.0, 0.1, 0.2, 0.3, 0.4, 0.5,0.6 wt.% ) were prepared using the solid state reaction method. The lattice parameters and the orthorhombicity were decreased slightly with Al2O3 addition. No ch...

In this paper, an experimental work was investigated on nanorefrigerant .Nano Al2O3-PAG oil was used as nano-refrigerant in R134a vapour compression refrigeration system . An experimental setup was designed and fabricated in the lab. The system performance was investigated using energy consumption test and freeze capacity test. The results indicate that Al2O3 nano refrigerant works normally and...

AlN thin films have been grown on R((1-12) surface-cut)-Al2O3, SiO2-glass and C((001) surface-cut)-Al2O3 substrates, by using a reactive-RF-sputter-deposition method. X-ray diffraction (XRD) shows that AlN film has (110) orientation of wurtzite crystal structure for R-Al2O3 and (001) orientation for SiO2-glass and C-Al2O3 substrates. The film thickness was analyzed by Rutherford backscattering ...

Wettability and interface microstructure were studied for Nb-containing melts in the contact with ceramic oxide materials of Al2O3-SiO2 system. Ni-40.5 at.%Nb and Au-(0-20) at.%Nb alloys were investigated as prospective alloys for high temperature brazes. Ceramic samples ranged in composition from pure Al2O3 to pure SiO2. The wettability was measured by the sessile drop method. Microstructure o...

The improvement of the metal/InGaAs interface is essential for the future application of InGaAs metal source/drain Schottky-barrier metal-oxide-semiconductor field-effect-transistors. In this article, on In0.53Ga0.47As, the authors examine the recently proposed method of inserting an ultrathin insulator to modulate the effective Schottky-barrier height SBH at the metal/semiconductor interface. ...

Gold nanoparticles (Au NPs) were prepared by reducing HAuCl4 with NaBH4. Their average particle sizes could be tuned in the range of 1.7 and 8.2 nm, by adjusting the amount of NaBH4 used during synthesis. The obtained Au NPs (colloids) were then loaded onto a commercial Al2O3 support to prepare Au/Al2O3 catalysts with tunable Au particle sizes. An optimal pH value (5.9) of the Au colloid soluti...

Palladium catalysts containing Pd(II) supported on Al2O3 and alumina-based mixed oxides, Al2O3-ZrO2, Al2O3-CeO2, and Al2O3-Fe2O3, are very effective in the Heck coupling of iodobenzene with cyclohexene in DMF solution. The best results, up to 81% of monoarylated products with a selectivity to 4-phenylcyclohexene (3) close to 90% were obtained with KOH as a base. The catalytic activity of pallad...

We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulatorsemiconductor capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing the capacitance-voltage characteristics of atomic layer deposited Al2O3 films on GaN substrates. The conduction band offset at the Al2O3/GaN interface was calculated...