نتایج جستجو برای: al doped

تعداد نتایج: 489137  

Journal: :Solid State Sciences 2022

Issues related to use of metallic interconnects in oxide thermoelectric generators (TEGs) need be addressed secure performance and durability. Metal suffer from high cost noble metals or chemical instability contact resistance non-noble metals, arising oxidation, evaporation, delamination the oxidising conditions ambient air at operating temperatures. This work introduces a stable highly conduc...

2004
Sittichai Natesakhawat Xueqin Wang Umit S. Ozkan

Hydrogen generation technologies have become increasingly important due to recent attention focusing on fuel cells. The water-gas shift reaction, which is performed in two stages as highand low-temperature shift, is of central significance to produce highpurity hydrogen. Generally, the high-temperature water-gas shift reaction (HTS) is conducted on Fe-Cr catalysts. However, these catalytic syst...

2002
V. R. Chowdari

Pristine and substituted spinels, Li(M1/6Mn11/6)O4 (M ~ Co1/6, Co1/12Al1/12) were prepared and their cathodic performance up to 80 cycles at ambient temperature and at 50 uC and the Li ion kinetic parameters obtained by galvanostatic intermittent titration technique (GITT) at ambient temperature and 50 uC and electrochemical impedance spectroscopy (EIS) at ambient temperature up to 80 cycles we...

2012
Ramchandra Pode Jang Hyuk Kwon

After the first report of electroluminescence in anthracene organic materials in monolayer devices in 1963 by Pope et al. (Pope et al., 1963) and by Helfrich and Schneider in 1965 (Helfrich & Schneider, 1965), this phenomenon remained of pure academic interest for the next two decades owing to the difficulty of growing large-size single crystals and the requirement of a very high voltage ( 100...

2013
Jeffrey Snyder

The Zintl compound Ca5Al2Sb6 is a promising thermoelectric material with exceptionally low lattice thermal conductivity resulting from its complex crystal structure. In common with the Al analogue, Ca5In2Sb6 is naturally an intrinsic semiconductor with a low p-type carrier concentration. Here, we improve the thermoelectric properties of Ca5In2Sb6 by substituting Zn 2+ on the In site. With incre...

2009
Soumendu Datta Mukul Kabir Tanusri Saha-Dasgupta Abhijit Mookerjee

Citation Datta, Soumendu et al. " Structure, reactivity, and electronic properties of V-doped Co clusters. Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Structur...

2006
David Andersson Ahmed Regina

David Andersson et al. report calculations revealing how doped oxides with cubic fluorite structures become effective ionic conductors. Cubic fluorite structures, such as ceria (CeO2), can become effective ionic conductors when doped with cations of lesser valence than the host cations. Doped ceria thus has potential as an electrolyte for environmentally friendly solid oxide fuel cells. Anderss...

Journal: :Advanced materials 2017
Cheng Zhang Nathaniel Kinsey Long Chen Chengang Ji Mingjie Xu Marcello Ferrera Xiaoqing Pan Vladimir M Shalaev Alexandra Boltasseva L Jay Guo

The field of nanophotonics has ushered in a new paradigm of light manipulation by enabling deep subdiffraction confinement assisted by metallic nanostructures. However, a key limitation which has stunted a full development of high-performance nanophotonic devices is the typical large losses associated with the constituent metals. Although silver has long been known as the highest quality plasmo...

2009
Y. Xu P. J. Sellin A. Lohstroh W. Jie T. Wang C. Mills P. Veeramani M. Veale

The x-ray spectroscopy performance of In/Al doped CdZnTe planar detectors based on as-grown crystals were investigated at room temperature, using a Tb x-ray source with a principle energy of 44.2 keV. The observed broadening in the photopeak resolution was attributed to incomplete charge carrier collection due to carrier trapping and scattering by the defects in the crystal. Alpha particle spec...

ژورنال: :مهندسی برق مدرس 0
kamyar - saghafi shahed university mohammad kazem moravej farshi tarbiat modarres university vahid ahmadi tarbiat modarres university

در این مقاله ساختار جدید δ-doped ldd hmesfet را معرفی و شبیه سازی می کنیم. یکی از راههای افزایش سرعت حامل در کانال در مجاورت سورس ترانزیستور مسفت، استفاده از ساختار نا همگون hmesfet است؛ یعنی از سورس alxga1-x as در مجاورت کانال gaasاستفاده می شود. با افزایش x (در صد مولی al ) می توان ناپیوستگی گاف نوار (δeg) در فصل مشترک سورس - کانال را افزایش داد و سرعت حامل را در ناحیه میدان ضعیف زیاد کرد. ام...

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