نتایج جستجو برای: یکسوساز cmos
تعداد نتایج: 19504 فیلتر نتایج به سال:
The Stacking of CMOS Photovoltaic Devices by Localized Substrate Removal for High Voltage Generation
Voltage boosting from CMOS photovoltaic device (PV) is achieved by implementing multiple PV units on single CMOS chip and are series connected by an external integrated passive device. Localized substrate removal process is developed to electrically isolate the PV units. Four-cell cascaded CMOS PV module provides an open-circuit voltage of 2.05 V while maintaining its superior PV performance.
A 2 μW power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023-10 humidity-sensitive layer, and a CMOS capacitance to voltage converter.
A 1.1 μW power dissipation, voltage-output humidity sensor with 10% relative humidity accuracy was developed in the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a humidity-sensitive layer of Intervia Photodielectric 8023D-10, a CMOS capacitance to voltage converter, and the self-calibration ci...
Adiabatic logic is an implementation of reversible logic in CMOS where the current flow through the circuit is The dual rail toffoli gate is designed using transmission gate. minimum sized XOR gate is implemented at 0.12ìm. solving the problems. Transmission Gate (TG) uses to realize complex logic functions by using a small number It is implemented in Standard CMOS logic (3). Proposed CLA imple...
The MM54HC/MM74HC family of high speed logic components provides a combination of speed and power characteristics that is not duplicated by bipolar logic families or any other CMOS family. This CMOS family has operating speeds similar to low power Schottky (54LS/74LS) technology. MM54HC/MM74HC is approximately half as fast (delays are twice as long) as the 54ALS/74ALS and 54S/74S logic. Compare...
A monolithic CMOS microelectrode array (MEA) for stimulation and recording of electrogenic cells is presented. The chip features addressability of an arbitrary electrode subset for stimulation, complete on-chip signal conditioning and A/D conversion. The array has been fabricated using an industrial 0.6-μm, 5-V CMOS technology with a 2-mask post-CMOS processing. Measurements from neuronal and c...
A 128-channel digital autocorrelator spectrometer using four 32 channel low power CMOS correlator chips has been built and tested. The CMOS correlator chip uses a 2-bit multiplication algorithm and a full-custom CMOS VLSI design to achieve low DC power consumption. The digital autocorrelator spectrometer has a 20 MHz band width, and the total DC power requirement is 6 Watts.
CMOS active pixel sensors (APS) have performance competitive with charge-coupled device (CCD) technology, and offer advantages in on-chip functionality, system power reduction, cost, and miniaturization. This paper discusses the requirements for CMOS image sensors and their historical development. CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversio...
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