CdSe nanoclusters embedded in silicon oxide layers are produced by sequential physical vapor deposition of SiOx …x < 1:5† and CdSe on crystalline silicon substrates at room temperature. High-resolution electron microscopy is used to prove the formation of CdSe nanoclusters as well as to study their shape, size and structure. Cross-sectional electron micrographs of the as-deposited samples revea...

cdse nanostructures were synthesized by using green chemical route as starch was used as capping agent. xrd, hr-tem, sead, uv and pl studies were made for structural and optical properties of the prepared sample. film morphology and the thickness measurement of n-cdse were carried out with afm analysis. i-v characteristics curve of this junction confirmed the formation of schottky contact betwe...

the use of quantum dots (qdots) as bright and photostable probes for long-term fluorescence imaging is gaining more interest. thus far, (pre)clinical use of qdots remains limited, which is primarily caused by the potential toxicity of qdots. most qdots consist of cd2+ ions, which are known to cause high levels of toxicity. therefore, the cytotoxic effects of cdse quantum dots on embryonic devel...

In this work, thin-film solar cells based on Cadmium Selenide (CdSe) film were used, due to the low manufacturing cost and superior electronic properties, type of cell also achieves appropriate efficiency. The current work will focus investigating effect thickness carrier concentration active layers in cell, window performance proposed using one-dimension capacitance simulation SCAPS-1D compute...

Pyridine-protected CdSe nanoparticles decorated SWNTs spontaneously, producing a large loading of CdSe nanoparticles on the SWNTs. The absorption spectrum of this hybrid material reflects those of the components. CdSe nanoparticles of different diameters, core-shell nanoparticles, and nanorods were shown to decorate SWNTs this way, showing the versatility of this technique.

Bulk-heterojunction PPV (poly(p-phenylene vinylene))-CdSe submicron fibers have been prepared by introducing electrostatic interaction between thioglycolic acid capped CdSe nanocrystals and PPV precursor, subsequently with electrospinning and thermal conversion. The photoconductive device on a single PPV-CdSe fiber showed notable photoresponse, good response speed, wavelength-sensitivity, and r...

The only II-VI/II-VI wide band-gap heterojunction to provide both good lattice match and pand n-type dopability is CdSe/ZnTe. We have carried out numerical simulations of several light emitter designs incorporating CdSe, ZnTe, and Mg alloys. In the simulations, Poisson’s equation is solved in conjunction with the hole and electron current and continuity equations. Radiative and nonradiative rec...

Recently cadmium selenide (CdSe) photoelectrodes attract­ ed interest concerning solar energy conversion because of their good stability and high efficiency. Investigations were per­ formed with CdSe single crystals [1, 2], sintered pellets [3], pastes [4, 5] as well as thin films, obtained by different meth­ ods, e.g. electrochemical deposition [6-8], spray pyrolysis [9], vacuum deposition [10...

Herein, metal-oxide-semiconductor fields effect transistors (MOSFET) are fabricated and characterized. p− type germanium dioxide coated onto Au/n-CdSe substrates top contacted with carbon point contacts is used to form the MOSFET devices. The structural investigations which were carried out help of X-ray diffraction technique revealed large lattice mismatched polycrystalline layers CdSe GeO2. d...