نتایج جستجو برای: نانولوله sic

تعداد نتایج: 15076  

2004
Md Hasanuzzaman Syed K. Islam Leon M. Tolbert Mohmmad T. Alam

An analytical model for lateral MOSFET that includes the effects of temperature variation in 4Hand 6H-SiC poly-type is presented in this paper. SiC shows a tremendous potential for high temperature electronics applications [1-4]. The model includes the effects of temperature variation on the threshold voltage, the carrier mobility, the body leakage current, and the drain and source contact regi...

2006
Giorgio Corani Marino Gatto

In [1], various model selection approaches were experimentally inter-compared; one of the considered model selection criteria was the Schwarz Information Criterion (SIC); however, SIC was incorrectly implemented. The same mistake has been repeated in other more recent papers. Here, we show why the SIC formula originally employed was wrong. We report instead the correct approach, which is well-k...

ژورنال: نانو مواد 2018

در این پژوهش، تاثیر مقدار ذرات تقویت کننده SiCp بر استحکام پیوند کامپوزیت‌های نانوساختار Al-SiCp به روش نورد تجمعی پیوندی مورد بررسی قرار گرفت. برای تولید کامپوزیت‌های Al-SiCp به روش نورد تجمعی پیوندی (ARB) ابتدا ورقه‌هایی با ابعاد mm3 1×50×200 بریده شدند و سپس این ورقه‌ها در کوره‌ای با دمای °C 370 به مدت h 2 آنیل شدند. فرآیند نورد تجمعی بر روی قطعه ا...

در این تحقیق تأثیر زمان آبکاری بر پوشش‌دهی پودر SiC به روش الکترولس نیکل – بور در سه دمای 75، 85 و 95 درجه سانتی‌گراد مورد بررسی قرار گرفته است. برای بررسی ریزساختار و مورفولوژی پودر‌های SiC پوشش داده شده از میکروسکوپ الکترونی روبشی مجهز به آنالیزگر EDS استفاده شد و به منظور تعیین ترکیب و فازهای موجود در پودرهای SiC پوشش داده شده دستگاه پراش پرتو ایکس مورد استفاده قرار گرفت. در فرآیند پوشش‌دهی ...

2013

February 2013 www.bodospower.com INTRODUCTION SiC is currently the only wide bandgap material to address the power electronics market needs for high performance 1200V and 1700V devices. SiC diode technology has thrived in the market for more than a decade, and many switches have recently become available to enable “all-SiC” circuit solutions. For example, in November 2012, Cree announced the in...

Journal: :Infection and immunity 2002
Barbara A Fernie-King David J Seilly Alexandra Davies Peter J Lachmann

Streptococcal inhibitor of complement (SIC) is a 31-kDa extracellular protein of a few, very virulent, strains of Streptococcus pyogenes (particularly M1 strains). It is secreted in large quantities (about 5 mg/liter) and inhibits complement lysis by blocking the membrane insertion site on C5b67. We describe investigations into the interaction of SIC with three further major components of the i...

2016
Tao Yang Liqin Zhang Xinmei Hou Junhong Chen Kuo-Chih Chou

Fabrication of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure. Multiple techniques including scanning electron microscopy (SEM), tr...

2012
Du Changwen Zhou Jianmin Keith W. Goyne

Paddy soils are classified as wetlands which play a vital role in climatic change and food production. Soil carbon (C), especially soil organic C (SOC), in paddy soils has been received considerable attention as of recent. However, considerably less attention has been given to soil inorganic carbon (SIC) in paddy soils and the relationship between SOC and SIC at interface between soil and the a...

2005
B. W. Jiang Ke Zhang Aigen Li

The mysterious 21 mm emission feature seen in 12 proto–planetary nebulae remains unidentified since its first detection in 1989. Over a dozen candidate materials have been proposed within the past decade, but none of them have received general acceptance. Very recently, silicon carbide (SiC) grains with impurities were suggested to be the carrier of this enigmatic feature, based on recent labor...

2014
Xiaoyong Ren Zhijian Peng Zhiqiang Fu Chengbiao Wang

Ultrafine tungsten carbide-nickel (WC-Ni) cemented carbides with varied fractions of silicon carbide (SiC) nanowhisker (0-3.75 wt.%) were fabricated by spark plasma sintering at 1350°C under a uniaxial pressure of 50 MPa with the assistance of vanadium carbide (VC) and tantalum carbide (TaC) as WC grain growth inhibitors. The effects of SiC nanowhisker on the microstructure and mechanical prope...

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