This paper analyses the electrical characteristics of 10 nm tri-gate (TG) N- and P-channel silicon-on-insulator (SOI) FinFETs with hafnium oxide gate dielectric. The analysis has been performed through simulations by using Silvaco ATLAS TCAD Bohm quantum potential (BQP) algorithm. influence geometrical parameters on threshold voltage VTH, subthreshold swing (SS), transconductance on/off current...

This white paper examines three categories of process characteristics, relates them to the internal structure of modern FPGAs, and then, in turn, looks at the impact the FPGAs have on the systems that employ them. In particular, a focus on the deployment of so-called FinFET transistors shows how Altera is exploiting Intel’s 14 nm Tri-Gate process to achieve a level of FPGA density, performance,...

The emergence of fin-shaped field effect transistors (FinFETs) was governed by the requirement VLSI industry to include more functionalities per unit chip area. Enhanced gate control in a FinFET due surrounding architecture built on fundamental geometry MOSFET made them highly compatible existing CMOS circuit applications. announcement vertically stacked multiple structure named as Ribbon-FET I...

Soft error performance of 16-nm designs fabricated using a commercial bulk C evaluated using heavy-ions. Results included variations show that multi-cell upsets dominate Dual-port SRAM has higher cross-section SRAM but did not have any multi-cell upset a direction. TCAD simulations showing the perturbation in the electric parameters as a fu LET support the experimental data. KeywordsSRAM, FinFE...

For the first time, we analyse SRAM cells made of ferroelectric based negative capacitance (NC) FinFETs considering both global and local variability via Monte-Carlo circuit simulations. First compare explain impact on device characteristics extracted figures merit conventional NC transistors. Then show that suppressed relative in NCFETs leads to lowering static Vmin (minimum supply voltage nee...