In this paper, we present the characteristics of high-performance strain-compensated MOCVD-grown 1200-nm InGaAs and 1300-nm InGaAsN quantum-well (QW) lasers using AsH3 and U-Dimethylhydrazine as the group V precursors. The design of the InGaAsN QW active region utilizes an In-content of approximately 40%, which requires only approximately 0.5% N-content to realize emission wavelengths up to 131...

The properties of thin InGaN films deposited via MOVPE on non-planar GaN surfaces are investigated in detail. Using a comprehensive combination of different investigation methods including transmission electron microscopy, spatially and time-resolved cathodoluminescence experiments and modeling of the radiative recombination kinetics a precise description of the semipolar QW properties can be p...

The tungsten phenylimido complex Cl4(PhCN)W(NPh) (2b) was tested as a single-source precursor for growth of tungsten nitride (WNx ) thin films, and results were compared to films previously deposited from the isopropylimido complexes Cl4(RCN)W(N i Pr) (1a, R /CH3; 1b, R /Ph). Films deposited from 2b exhibited growth rates ranging from 2 to 21 Å min 1 over a temperature range of 475 /750 8C, and...

Symmetrical four-sided 12-mm-high pyramids with 301-tilted sides were revealed by the etching of semi-insulating (1 0 0) GaAs substrates in 1H3PO4: H2O2:8H2O at 25 1C via sacrificial /0 0 1S-oriented Ti/GaAs/AlAs (100/2000/100 nm) etching mask patterns. The pyramids, MOCVD overgrown with InGaP/AlGaAs/GaAs heterostructure pyramids, were used as the base for magnetic field vector sensors. Each se...

The AlGaN/GaN heterostructure HEMTs were epitaxially grown using MOCVD on semi-insulating SiC substrates. Standard III–V commercial production processing technology was used to fabricate the devices, which were then subjected to stress under accelerated DC life-tests with base-plate temperatures of 82, 112, and 142 C. Drain bias of 40 V and time-zero drain current of 250 mA/mm were applied. TEM...

This study reports the growth of MgZnO nanowall structures on GaAs substrates through the incorporation of Mg by metalorganic chemical vapor deposition at a growth temperature of 500 C. Through Mg incorporation, a 5 nm-thick MgGa2O4 layer was initially self-formed on GaAs substrates, which acted as a buffer layer with reduced lattice mismatch for nanowall growth. However, due to the large diffe...

A very smooth surface film of c-axis oriented Y B a z C w G (YBCO) with roughness of less than monomolecular layer over lOpmxlO~rn, free of precipitates, has been obtained by atomic layer-by-layer metalorganic chemical vapor deposition (MOCVD) on a SrTi03 substrate at 650°C. A very large terrace length of 0.3-0.5pm may be due to the enhanced migration of growing species on the surface. The resu...