The band gap of semiconductors like silicon and silicon carbide (SiC) is the key for their device properties. In this research, the band gap of 6H-SiC and its temperature dependence were analyzed with silicon 2p x-ray absorption spectroscopy (XAS), x-ray emission spectroscopy (XES) and resonant inelastic x-ray scattering (RIXS) allowing for a separate analysis of the conduction-band minimum (CB...

We present a theoretical investigation of the electronic and optical properties of V-and T-shaped quantum wires. Valence band mixing as well as realistic sample geometries are fully included through an accurate and efficient approach that is described here in detail. We investigate the resulting valence band structure, which shows some significant peculiarities, such as an anomalously large spi...

We compare different approximation schemes for investigating ferromagnetism in the periodic Anderson model. The use of several approximations allows for a detailed analysis of the implications of the respective methods, and also of the mechanisms driving the ferromagnetic transition. For the Kondo limit, our results confirm a previously proposed mechanism leading to ferromagnetic order, namely ...

Atomic-scale gold clusters were intercalated at the inter-facet corner sites of Pt-shell Ru-core nanocatalysts with near-monolayer shell thickness. We demonstrated that these unique clusters could serve as a drain of valence electrons in the kink region of the core-shell heterojunction. As jointly revealed by density functional theory calculations and valence band spectra, these Au clusters ext...

Recent high-resolution soft X–ray resonant inelastic X-ray scattering technique enables us to distinguish valence electronic structure of water molecules having different hydrogen-bond configurations in the liquid phase. Moreover, in the elastic region, well-separated multiple vibrational structures appear, which corresponds to the internal OH stretch vibration in the ground state. Both the val...

The electronic structures of the highest occupied molecular orbital (HOMO) or the HOMO-derived valence bands dominate the transport nature of positive charge carriers (holes) in organic semiconductors. In the present study, the valence-band structures of single-crystal pentacene and the temperature dependence of their energy-momentum dispersion relations are successfully demonstrated using angl...