In this paper, a new Si/SiGe heterojunction tunneling field-effect transistor with a T-shaped gate (HTG-TFET) is proposed and investigated by Silvaco-Atlas simulation. The two source regions of the HTG-TFET are placed on both sides of the gate to increase the tunneling area. The T-shaped gate is designed to overlap with N+ pockets in both the lateral and vertical directions, which increases the...

Based on the non-equilibrium Green’s function formalism we numerically studied gate-controlled tunneling carbon nanotube field-effect transistors. The effect of doping concentration on the performance of the device has been investigated. We show that an asymmetric doping profile can improve the Ion/Ioff ratio of the device improves.

We investigate the thermopower due to the orbital Kondo effect in a single quantum dot system by means of the noncrossing approximation. It is elucidated how the asymmetry of tunneling resonance due to the orbital Kondo effect affects the thermopower under gate-voltage and magnetic-field control.

A two-dimensional array of quantum dots in a magnetic field is considered. The electrons in the quantum dots are described as unitary random matrix ensembles. The strength of the magnetic field is such that there is half a flux quantum per plaquette. This model exhibits the Integer Quantum Hall Effect. For N electronic states per quantum dot the limit N → ∞ can be solved by a saddle point integ...

We apply the bosonization technique to the problem of tunneling in a Fermi liquid, and present a semiclassical theory of tunneling rates. To test the method, we derive and evaluate an expression for the tunneling current in the problem of two parallel Luttinger liquids. Next we study tunneling between parallel two dimensional Fermi liquids. In the absence of a magnetic field, the conductance I/...