نتایج جستجو برای: tunneling effect
تعداد نتایج: 1660038 فیلتر نتایج به سال:
Effect of interface states on spin-dependent tunneling in Fe/MgO/ Fe tunnel junctions" (2005).
The time it takes for a particle or wave packet to tunnel through a potential barrier has been debated for decades [1–8]. The fact that there is a finite duration for the tunneling process is not in doubt. The debate centers around the validity of the various proposed tunneling times, the relation between those times, and the physical meaning of a tunneling time especially when it predicts appa...
Related Articles Ultra-thin titanium oxide Appl. Phys. Lett. 101, 083113 (2012) Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices Appl. Phys. Lett. 101, 043508 (2012) Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes J. Appl. Phys. 111, 123115 (2012) Tuning of terahertz intrinsic oscillations in asymmetric triple-bar...
We consider the proximity effect in a normal dot coupled to a bulk superconducting reservoir by the tunnel contact with large normal conductance. Coulomb interaction in the dot suppresses the proximity minigap induced in the normal part of the system. We find exact expressions for the thermodynamic and tunneling minigaps as functions of the junction's capacitance. The tunneling minigap interpol...
Related Articles Ultra-thin titanium oxide Appl. Phys. Lett. 101, 083113 (2012) Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices Appl. Phys. Lett. 101, 043508 (2012) Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes J. Appl. Phys. 111, 123115 (2012) Tuning of terahertz intrinsic oscillations in asymmetric triple-bar...
In the present work we suggest a recipe for finding tetragonal Heusler compounds with perpendicular magnetic anisotropy (PMA) that also exhibit large tunneling magnetoresistance (TMR) when used as electrodes in magnetic tunnel junction devices with suitable tunneling barrier materials. We performed density-functional theory calculations for 286 Heusler compounds and identified 116 stable tetrag...
Quantum mechanics successfully describes physical processes at the microscopic scale and sometimes exhibits unique counter-intuitive phenomena. One such example is quantum-mechanical tunneling that cannot be explained in terms of classical mechanics. In search of an applicability for quantum mechanics on a macroscopic scale [1], the effect of dissipation on quantum tunneling has been studied in...
Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes
Related Articles Ultra-thin titanium oxide Appl. Phys. Lett. 101, 083113 (2012) Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices Appl. Phys. Lett. 101, 043508 (2012) Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes J. Appl. Phys. 111, 123115 (2012) Tuning of terahertz intrinsic oscillations in asymmetric triple-bar...
We report the study of ultrasound tunneling in 3D phononic crystals, consisting of fcc arrays of close-packed tungsten carbide beads in water. The transmission coefficient, phase velocity, and group velocity were measured along the [111] direction, allowing us to systematically investigate the tunneling of ultrasound at frequencies in the lowest band gap. Our experimental data are interpreted u...
We report on the study of atomically sharp superconducting tips for scanning tunneling microscopy and spectroscopy. The results clearly show vacuum tunneling of superconducting quasiparticles from atomically sharp tips. Observed deviations of the energy gap of the superconducting tip from its bulk value are attributed to the proximity effect. We show that a combination of a superconducting tip ...
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