Small-signal microwave transistor characteristics are used to construct and fit a comprehensive model of their dynamic behaviour. The model includes thermal effects and trap-related effects, which influences such a large range of frequencies that they are not well characterized by large-signal or pulse measurements alone. Correlation of the model with smallsignal characteristics demonstrates th...

Exclusive-NOR (XNOR) gates are important in digital circuits. This paper proposes the novel design of 2T XNOR gate using pass transistor logic. The proposed circuit utilizes the least number of transistors and no complementary input signal is used. The design has been compared with earlier designed XNOR gates and a significant improvement in silicon area and power-delay product has been obtaine...

This paper presents a field effect transistor with a channel consisting of a two-dimensional electron gas located at the interface between an ultrathin metallic film of Ni and a p-type Si(111) substrate. We have demonstrated that the two-dimensional electron gas channel is modulated by the gate voltage. The dependence of the drain current on the drain voltage has no saturation region, similar t...

This paper presents a new voltage comparator design called Quantum Voltage (QV) comparator for the next generation deep sub-micron low voltage CMOS flash A/D converter (ADC). Unlike the traditional differential voltage comparators designed to minimize input-offset voltage error due to the mismatches in a differential transistor pair, the QV comparators are designed to optimize the inputoffset v...

An improvement to the load-pull technique for a large-signal design of a transistor amplifier is proposed. On the contrary to the current load-pull technique – a smallsignal pre-matching on the output of the transistor is applied which results in reduced demands on a maximum VSWR of the tuner. This minimizes the launcher radiation in the K band and reduces measurement uncertainty. The proposed ...

Physical faults include bridging faults, break (open) faults, transistor stuck-on and transistor stuck-off. Compared to traditional gate-level stuck-at faults, physical faults more closely represent realistic faults appearing at the gate level and transistor level. Analytical modelling for such faults, used for design and testability, is still a new and emerging area. Undetectable bridging faul...

The most common practice to model the transistor chain, as it appears in CMOS gates, is to collapse it to a single equivalent transistor. This method is analyzed and improvements are presented in this paper. Inherent shortcomings are removed and an effective transistor width is calculated taking into account the operating conditions of the structure, resulting in very good agreement with SPICE ...

The building block of modern digital computers is the celebrated transistor which is a charge-based switch and whose two stable conductance states encode the binary bits 0 and 1. The two states are demarcated by the amount of charge stored in the transistor’s channel. If more charge is present, the transistor is on and if less charge is present, it is off. When a transistor switches, charges ha...

Under the usual conditions of operation the MOS transistor operates in saturation and is a square-law device: the characteristic curve of the drain current as a function ofthe gate voltage is parabolic in shape (see the preceding article [11, fig. 2b). However, if the MOS transistor is biased to bring the operating point on to the slope of the parabola, then the amplification will be practicall...

We propose and experimentally demonstrate a triple-mode single-transistor graphene amplifier utilizing a three-terminal back-gated single-layer graphene transistor. The ambipolar nature of electronic transport in graphene transistors leads to increased amplifier functionality as compared to amplifiers built with unipolar semiconductor devices. The ambipolar graphene transistors can be configure...