نتایج جستجو برای: transconductance

تعداد نتایج: 1298  

Journal: :The Transactions of The Korean Institute of Electrical Engineers 2015

Journal: :international journal of nano dimension 0
r. abband pashaki department of electrical engineering, guilan science and research branch, islamic azad university, guilan, iran. s. a. sedigh ziabari department of electrical engineering, roudbar branch, islamic azad university, roudbar, iran.

in this paper, the temperature dependence of some characteristics of cylindrical gate-all-around si nanowire field effect transistor (gaa-si-nwfet) is investigated to representing the temperature nano-sensor structures and improving their performance. firstly, we calculate the temperature sensitivity of drain-source current versus the gate-source voltage of gaa-si-nwfet to propose the temperatu...

2015
Chao Wang Wen-Ya Lee Desheng Kong Raphael Pfattner Guillaume Schweicher Reina Nakajima Chien Lu Jianguo Mei Tae Hoon Lee Hung-Chin Wu Jeffery Lopez Ying Diao Xiaodan Gu Scott Himmelberger Weijun Niu James R. Matthews Mingqian He Alberto Salleo Yoshio Nishi Zhenan Bao

Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance wh...

2010
Kow-Ming Chang Chih-Tien Chang Kun-Mou Chan

Ion sensitive field-effect transistor (ISFET) based urease biosensors with solid state reference systems for single-ended and two-ended differential readout electronics were investigated. The sensing membranes of the biosensors were fabricated with urease immobilized in a conducting polymer-based matrix. The responses of 12.9∼198.1 mV for the urea concentrations of 8∼240 mg/dL reveal that the a...

2004
Bram Nauta

This paper presents CMOS circuits for integrated analog filters at very high frequencies, based on transconductance-C integrators. First a differential transconductance element based on CMOS inverters is described. With this circuit a linear, tunable integrator for very-high-frequency integrated filters can be made. This integrator has good linearity properties (1% relative gm error for 2-V,, i...

2000
Yngvar Berg Øivind Naess Mats Erling Høvin

We present a novel ultra lowvoltage floatinggate transconductance amplifier with tunable gm. The OTA can provide a sinh shaped output current , a tanh shaped output current or an enhanced linear sinh{tanh} output current.

2000
Øivind Næss Yngvar Berg

This paper describes a fully diierential dual-ended ultra low-voltage (ULV) FGUVMOS operational transconductance ampliier (FGUVMOS-OTA). The OTA has no internal nodes, rail-to-rail operation, and a dynamic load.

2004
G. J. SAULNIER

CONSIDINE, v.: 'Digital complex sampling', Electron. Lett., 1983, 19, pp. 608-609 RICE, U. w., and wu, K. H.: 'Quadrature sampling with high dynamic range', IEEE Trans., 1982, AES-18, (4), pp. 736739 RAOER, c. M.: 'A simple method for sampling in-phase and quadrature components', IEEE Trans., 1984, AESZO, (6), pp. 821-824 RAFFEXTY, w., and SAULMER, G. I.: 'Variable-delay, sinelcosine noncoheren...

2001
YNGVAR BERG

Ultra low-voltage (ULV) floating-gate (FG) differential amplifiers are presented. In this paper we present several different approaches to CMOS ULV amplifier design. Sinh-shaped and tanh-shaped transconductance amplifiers are described. Measured results are provided. Keywords— Floating-gate, low-voltage, low-power, lowvoltage amplifiers, analog floating-gate circuits.

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