Amorphous or polycrystalline films of three organic materials (solvent blue 35 and two porphyrins) have been recrystallized into single-crystal thin films (of micrometer thickness) by a zone-melting technique, in which an electrically heated wire generated a narrow molten zone (0.5-2 mm wide) on the organic layer sandwiched between two pieces of glass or indium-tin oxide-coated glass. When the ...

In this research, the ideal procedures were obtained for growth epitaxial layers of tin and gallium solutions which are solid solutions, two molten material dissolved on a silicon substrate. The results to obtain lowest dislocation density thin films. relationship between densities films thickness film was an exponential its variable values. Thin with compound containing smooth structure varied...

The development of cost-effective and low-temperature synthesis techniques for the growth of highquality zinc oxide thin films is paramount for fabrication of ZnO-based optoelectronic devices, especially ultraviolet (UV)-light-emitting diodes, lasers and detectors. We demonstrate that the properties, especially UV emission, observed at room temperature, of electrodeposited ZnO thin films from c...

Titanium nitride-Copper (TiN-Cu) nanocomposite films were deposited onto stainless steel substrate using hollow cathode discharge ion plating technique. The influence of Cu content in the range of 2-7 at.% on the microstructure, morphology and mechanical properties of deposited films were investigated. Structural properties of the films were studied by X-ray diffraction pattern. Topography of t...

Tin oxide thin films were successfully fabricated by the sol-gel spin coating technique for varying number of cycles. The samples were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM). The effect of a number of cycles on the structural and optical properties of SnO2 films was studied. The crystallite size is changed from 7.7 to 31.1 nm by increasing the number of ...

Titanium nitride (TiN) is a plasmonic material having optical properties resembling gold. Unlike gold, however, TiN is complementary metal oxide semiconductor-compatible, mechanically strong, and thermally stable at higher temperatures. Additionally, TiN exhibits low-index surfaces with surface energies that are lower than those of the noble metals which facilitates the growth of smooth, ultrat...

This work presents a study of multilayered Ti/TiN/TiC thin films obtained using a PAPVD (Plasma Assisted Physical Vapor Deposition) system by pulsed-arc discharge. For this purpose, a titanium target and a stainless steel substrate were used, placed on the cathode and on the anode, respectively, inside a vacuum chamber. To grow these films, different gases and concentrations were required. Ti i...

The preparation of Cu₂ZnSnSe₄ (CZTSe) thin films by the selenization of an electrodeposited copper-tin-zinc (CuSnZn) precursor with various Sn contents in low-pressure Se+SnSex vapor was studied. Scanning electron microscope (SEM) and energy dispersive spectroscopy (EDS) measurements revealed that the Sn content of the precursor that is used in selenization in a low-pressure Se+SnSex vapor atmo...

für Naturforschung in cooperation with the Max Planck Society for the Advancement of Science under a Creative Commons Attribution 4.0 International License. Dieses Werk wurde im Jahr 2013 vom Verlag Zeitschrift für Naturforschung in Zusammenarbeit mit der Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. digitalisiert und unter folgender Lizenz veröffentlicht: Creative Commons Namen...

The thermal conductivity Λ of wide bandgap semiconductor thin films, such as AlN, affects the performance high-frequency devices, power and optoelectronics. However, accurate measurements in films with sub-micrometer thicknesses > 100 W m−1 K−1 is challenging. Widely used pump/probe metrologies, time–domain thermoreflectance (TDTR) frequency–domain thermoreflectance, lack spatiotemporal ...