نتایج جستجو برای: thin layer interface
تعداد نتایج: 568744 فیلتر نتایج به سال:
the main problemswith the use of fossil fuels is the restrictions on their access and the detrimental consequences of their use which causes a threat to human health and quality of life. consequently, the use of other energy sources has become necessary. renewable energy as a permanent and clean energy source is an answer to this problem. one such energy source includes photovoltaic solar energ...
abstract our previous studies showed that various extracts of persian shallot (allium hirtifolium) have anti-angiogenic effects. this study has been undertaken to isolate and identify the major effective anti-angiogeneic sub-fraction of shallot. after preparation of the 50% hydroalcoholic extract of shallot bulbs, the extract was successively fractionated into n-hexane, ethyl acetate, n-butanol...
In this work, we synthesize large-area thin films of a conjugated, imine-based, two-dimensional covalent organic framework at the solution/air interface. Thicknesses between ∼2-200 nm are achieved. Films can be transferred to any desired substrate by lifting from underneath, enabling their use as the semiconducting active layer in field-effect transistors.
The interaction of human-derived chondrocytes and thin hyaluronan layers was studied using the quartz crystal microbalance with dissipation (QCM-D) technique combined with light microscopy. This approach allowed unique real-time monitoring of the interface between the cells and the sensor surface. Our results suggest that the hyaluronan layer is rapidly degraded by chondrocytes.
The ZnO nanoflowers were synthesized by reactive vapor deposition. A secondary nucleation in the stalk/leaves interface was suggested. The photoluminescence revealed that there were many oxygen vacancies in the nanoflowers. To tune the optical properties of ZnO nanoflowers, ZnO thin films with varying thicknesses were coated on the nanoflowers by atomic layer deposition, which can distinctly im...
High-performance and low-temperature-compatible solid phase crystallized polycrystalline silicon thin film transistors using thermal oxide buffered aluminum oxide (Al2O3) as gate dielectric are demonstrated. By growing a thermal oxide buffer layer using two-step annealing method, the interface quality is greatly improved, resulting in excellent device performance.
Epitaxial oxide interfaces with broken translational symmetry have emerged as a central paradigm behind the novel behaviors of oxide superlattices. Here, we use scanning transmission electron microscopy to demonstrate a direct, quantitative unit-cell-by-unit-cell mapping of lattice parameters and oxygen octahedral rotations across the BiFeO3-La0.7 Sr0.3 MnO3 interface to elucidate how the chang...
Recent progresses in liquid phase crystallization enabled the fabrication of thin wafer quality crystalline silicon layers on low-cost glass substrates enabling conversion efficiencies up to 12.1%. Because of its indirect band gap, a thin silicon absorber layer demands for efficient measures for light management. However, the combination of high quality crystalline silicon and light trapping st...
double layer zno/sno2 thin film resistive gas sensors were fabricated by successive pvd of those oxides onto porcelain substrates. the metallic contacts were provided by electron beam evaporation of platinum onto substrates prior to deposition of the gas sensitive layers. deposits were thermally annealed at different temperatures. it was shown that the activation energy of electrical conduction...
Electrical properties, current transport mechanism, and stress induced leakage current (SILC) effect of Al2O3 gate dielectric thin films deposited by reactive dc magnetron sputtering were studied. The results show that annealing in O2 ambient can effectively reduce the oxygen vacancy in Al2O3 films but may not result in additional interfacial layer form at Al2O3/Si interface. In the fresh devic...
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