Solution-processed organic field effect transistors (OFETs), which are amenable to facile large-area processing methods, have generated significant interest as key elements for use in all-organic electronic applications aimed at realizing low-cost, lightweight, and flexible devices. The low performance levels of n-type solution-processed bottom-contact OFETs unfortunately continue to pose a bar...

The carbon nanotube (CNT) industry is expanding rapidly, yet little is known about the potential environmental impacts of CNT manufacture. Here, we evaluate the effluent composition of a representative multiwalled CNT synthesis by catalytic chemical vapor deposition (CVD) in order to provide data needed to design strategies for mitigating any unacceptable emissions. During thermal pretreatment ...

One-dimensional a-Fe2O3 is a promising nanomaterial for advanced applications in catalysis and water splitting, environmental protection, sensors, dye solar cells, magnetic storage media, bioprocessing, and controlled drug delivery and detection, especially as carriers of antigens for prion detection and PCR manipulation. a-Fe2O3 nanowires have been successfully synthesized by various methods b...

We found that the atomic-concentration-ratio of carbon to silicon (C/Si ratio) in carbide (SiC) films formed by thermal chemical vapor deposition (CVD) was much greater than 1 when source gas for CVD dimethylsilane (DMS). Thus, we tried change carbon-inclusion levels film injecting some ion beams into a depositing SiC during process with DMS. Three beams, i.e., Si+, SiCH5+, or C+ ions were inje...

INTRODUCTION AND OBJECTIVE Polygenic or multifactorial inheritance of chronic disorders (MICD) contribute to irreversible cochleovestibular impairment. Our aim was to determine the type and degree of cochleovestibular dysfunction (CVD) in patients with MICD. METHODS Cross-sectional. We studied 385 patients with type 2 diabetes mellitus, systemic arterial hypertension and dyslipidemia who were...

For the emerging semiconductor material silicon carbide (SiC) used in high power devices, chemical vapor deposition (CVD) is the most prominent method to create the electrically active SiC epitaxial layers in the device. The process of growing such epitaxial layers is to use a hydrocarbon and silane diluted in hydrogen flow through a hot chamber where chemical reactions take place in such a man...