This paper describes the integration of field-induced magnetic switching (FIMS) and thermally assisted switching (TAS) magnetic random access memories in FPGA design. The nonvolatility of the latter is achieved through the use of magnetic tunneling junctions (MTJs) in the MRAM cell. A thermally assisted switching scheme helps to reduce power consumption during write operation in comparison to t...

Carbon nanotube field-effect transistor (CNTFET) refers to a field-effect transistor that utilizes a single carbon nanotube or an array of carbon nanotubes as the channel material instead of bulk silicon in the traditional MOSFET structure. Since it was first demonstrated in 1998, there have been tremendous developments in CNTFETs, which promise for an alternative material to replace silicon in...

A logic simulator can prove the correctness of a digital circuit if it can be shown that only circuits implementing the system specification will produce a particular response to a sequence of simulation commands. Three-valued modeling, where the third state indicates a signal with unknown digital value, can greatly reduce the number of patterns that need to be simulated for complete verificati...

Static random access memory (SRAM) circuits optimized for minimum energy consumption typically operate in the subthreshold regime with ultra low-power-supply voltages. Both the read and the write propagation delays of a subthreshold memory circuit are significantly reduced with an increase in the die temperature. The excessive timing slack observed in the clock period of constant-frequency subt...

Packet switches (that is, IP routers and ATM and Ethernet switches) maintain statistics for performance monitoring, network management, security, network tracing, and traffic engineering. Counters usually collect such statistics as the number of arrivals of a specific packet type or they count a particular event, such as when the network drops a packet. A packet’s arrival can lead to the updati...

A logic simulator can prove the correctness of a digital circuit if it can be shown that only circuits implementing the system speciication will produce a particular response to a sequence of simulation commands. Three-valued modeling, where the third state X indicates a signal with unknown digital value, can greatly reduce the number of patterns that need to be simulated for complete veriicati...

Packet switches (e.g., IP routers, ATM switches and Ethernet switches) maintain statistics for a variety of reasons: performance monitoring, network management, security, network tracing, and traffic engineering. The statistics are usually collected by counters which might, for example, count the number of arrivals of a specific type of packet, or count particular events, such as when a packet ...

In this paper, we propose a five-transistor (5T) static random access memory (SRAM) that can be read and written reliably with the assistance of read/write circuits. The read/write circuits include a voltage control circuit, a pre-charging circuit and a standby start-up circuit. The voltage control circuit is connected to the sources corresponding to driver transistors of each row memory cells....

First, background will be provided on embedded DRAM process, circuit and market issues. The term system-on-silicon has been used to denote the integration of random logic, processor cores, SRAMs, ROMs, and analog components on the same die. But up to recently, one major component had been missing: high-density DRAMs. Today's technologies allow the integration of significant amounts of DRAM memo...

For almost 30 years, computer memory systems have been essentially the same: volatile, high speed memory technologies like SRAM and DRAM used for cache and main memory; magnetic disks for high-end data storage; and persistent, low speed ash memory for storage with low capacity/low energy consumption requirements such as embedded/mobile devices. Today we watch the emergence of new non-volatile m...