نتایج جستجو برای: start of injection soi
تعداد نتایج: 21179052 فیلتر نتایج به سال:
in this paper, the performance of a natural gas hcci engine is studied through a thermodynamic model including detailed chemical kinetics. it is shown that as hydroxyl radical has important effects on natural gas combustion, it is possible to quantify soc with hydroxyl concentration variations. meanwhile the influence of using formaldehyde as an additive on the engine characteristics has been i...
Substrate engineering [1] has enabled the industry to overcome many of the limitations encountered by traditional scaling. As a result, device architecture and engineered substrates have become strongly coupled, a coupling that is growing stronger as the IC industry moves to the 32 nm technology node and beyond. Substrate engineering started in earnest with the industry transition to SOI wafers...
Abstract In this work, we investigate and analyze the impact of gate tunneling on dynamic behaviors of partially depleted SOI CMOS with the aid of the physically accurate BSIMPD model. We examine in particular the impact of gate tunneling on the history dependence of inverter delays. The examination reveals key requirements for capturing the history effect in SPICE modeling. This study suggests...
BACKGROUND Pertussis is poorly controlled, with the highest rates of morbidity and mortality among infants. Although the source of infant pertussis is often unknown, when identified, mothers have historically been the most common reservoir of transmission. Despite high vaccination coverage, disease incidence has been increasing. We examined whether infant source of infection (SOI) has changed i...
In this article, a novel concept is introduced to improve the Radio Frequency (RF) linearity of Partially-Depleted (PD) Silicon-On-Insulator (SOI) MOSFET circuits. The transition due to the non-zero body resistance (RBody) in output conductance of PD SOI devices leads to linearity degradation. A relation for RBody is defined to eliminate the transition and a method to obtain transition-free cir...
The coupling between the spin and orbital degrees of freedom of photons is usually very weak, but recent studies have shown that this spin-orbit interaction (SOI) can be easily detected in metal structures. Here we show how the SOI of light is enhanced in plasmonic metal nanostructures, explore the underlying mechanism for this effect, and further demonstrate how it could potentially be harness...
Hand, foot and mouth disease (HFMD) was an emerging viral infectious disease in recent years in Shenzhen. The underlying risk factors have not yet been systematically examined. This study analyzed the short-term effect of El Niño-Southern Oscillation on pediatric HFMD in Shenzhen, China. Daily count of HFMD among children aged below 15 years old, Southern Oscillation Index (SOI), and weather va...
کاهش ولتاژ شکست یکی از مهمترین اشکالات افزارهایی است که در تکنولوژی soi ساخته می شوند. روش های متعددی برای افزایش ولتاژ شکست افزاره های soi پیشنهاد شده است. کاهش میدان سطحی، فوق پیوند و ایجاد پیک های اضافی از کاربردی ترین روش های افزایش ولتاژ شکست می باشند. برای افزایش ولتاژ شکست ترانزیستورهای ماسفت، یک ساختار جدید با دو پنجره در اکسید مدفون شده پیشنهاد شده است. در این ساختار از روش ایجاد پیک...
پس از بازنگری کلی بر تکنولوژی soi مدل و ترانزیستورهای soi و انواع روش های تبدیل سیگنال آنالوگ به دیجیتال مورد بررسی قرار می گیرد. در ادامه با طراحی زیرمدارهای مبدل a/d فلاش سه بینی اثر تکنولوژی soi بر این مدل بررسی می شود. مدل های soi بکاررفته از دانشگاه برکلی و پارامترهای آنها از دانشگاه فلوریدا تهیه شده و شبیه سازی مدارات بوسیله نرم افزار pspice5.0 و spice-opus انجام شده است. براساس شبیه سازی...
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