نتایج جستجو برای: stacking fault energy
تعداد نتایج: 737845 فیلتر نتایج به سال:
Organic/inorganic interfaces play a crucial role in organic electronic devices such as organic field effect transistors (OFETs), organic light emitting diodes (OLEDs) and organic photovoltaics (OPVs). The properties of organic thin-film transistors depend on the transport of charges induced at the semiconductor/gate insulator interface. Structural defects near this interface influence the charg...
Metastable austenitic steels react to plastic deformation with a thermally and/or mechanically induced martensitic phase transformation. The transformation ?’-martensite can take place directly or indirectly via the intermediate stage of ?-martensite from single-phase austenite. This effect is influenced by stacking fault energy (SFE) steels. An SFE < 20 mJ/m2 known promote indirect conversi...
We have investigated the structure of non-polar GaN, both on the M - and A-plane, grown on LiGaO2 by plasma-assisted molecular beam epitaxy. The epitaxial relationship and the microstructure of the GaN films are investigated by transmission electron microscopy (TEM). The already reported epi-taxial relationship and for M -plane GaN is confirmed. The main defects are threading dislocations and s...
The grain boundary character distribution (GBCD) is a direct measurement that can be determined from a single planar section. Since the GBCD is inversely related to the grain boundary energy distribution, it offers a useful metric for validating grain boundary energy calculations. Comparisons between the measured GBCD and calculated energies for 388 grain boundaries in Al show that, for boundar...
In the present study, the influence of annealing temperature on mechanical properties and the microstructure of a high manganese austenitic steel (Fe-30Mn-4Al-4Si-0.5C) was investigated. X-ray diffractometry, optical and scanning electron microscopy, hardness and tensile tests were used to analyze the relationship between mechanical properties and microstructure after annealing process. The res...
The ratio of a generalized stacking-fault (GSF) energy and a free surface energy is an important parameter to describe the brittle versus ductile behavior of materials [1]. However, GSF energy values calculated with different empirical potentials are scattered over a wide range, depending on the selected poentials [2,3]. In this study, we calculated the GSF energies of Fe and Mo, by using quant...
A long-standing dilemma in the geology of Israel is whether the Carmel Fault (CF) is currently active and to what extent does it contribute to the seismic hazard of the city of Haifa and the nearby petrochemical industrial area. In this study we use InSAR stacking and PSInSAR to measure the surface movements on both sides of the CF. Processing single interferograms showed low signal to noise ra...
Using QM-Sutton-Chen many-body potential, we have studied the 1⁄2a<110> screw dislocation in nickel (Ni) via Molecular Dynamics (MD) simulations. We have studied core energy and structure using a quadrupolar dislocation system with 3-D periodic boundary conditions. The relaxed structures show dissociation into two partials on {111} planes. The equilibrium separation distance between the two par...
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