نتایج جستجو برای: sputtering atoms

تعداد نتایج: 67393  

Journal: :Journal of Physics D 2022

Abstract Plasma etching of nano-meter-scale complex structures for semiconductor device manufacturing requires a deeper understanding mechanisms. For example, it is known experimentally that the sputtering yield material tends to have weak dependence on mass incident ions except extremely light such as helium. To understand this property, system atoms interacting with Lennard–Jones (LJ) potenti...

2008
Dong-Joo KWAK Byung-Wook PARK Youl-Moon SUNG Min-Woo PARK

In this paper aluminium-doped zinc oxide(ZnO:Al) conducting layer was deposited on polyethylene terephthalate(PET) substrate by r. f. magnetron sputtering method. The effects of gas pressure and r. f. sputtering power on the structural and electrical properties of ZnO:Al thin film were investigated experimentally. The results show that the resistivity of the film was strongly influenced by the ...

2012
G. J. van Rooij J. W. Coenen L. Aho-Mantila M. Beurskens S. Brezinsek M. Clever R. Dux C. Giroud M. Groth K. Krieger S. Marsen G. F. Matthews G. Maddison A. Meigs R. Neu T. Pütterich A.C.C. Sips M. F. Stamp W.A.J. Vijvers P. de Vries

Tungsten erosion in the outer divertor of the JET ITER like wall was quantified by spectroscopy. Effective sputtering yields of ~10 were measured in L-mode at ~30 eV low recycling divertor conditions and Be was identified as the main species causing the sputtering. The signature of prompt redeposition was observed in the analysis of WI 400.9 nm and WII 364 nm line ratios indicating >50% redepos...

2000
Jong-Ryul Jeong Sung-Chul Shin

We have studied the easy-axis reorientation of Ni/Pd multilayer with varying Ar sputtering pressure. All the Ni/Pd multilayers prepared by dc-magnetron sputtering at an Ar sputtering pressure of 2 mTorr show in-plane magnetic anisotropy. However, room-temperature perpendicular magnetic anisotropy was observed in Ni/Pd multilayers prepared at an Ar sputtering pressure of 7 mTorr. To understand t...

2004
Simon J. Henley Gareth M. Fuge Michael N. R. Ashfold

Pulsed laser ablation of LiF was studied using both nanosecond (ns) and femtosecond (fs) pulses at 248 nm. Optical emission from electronically excited Li and F atoms in the plume of ejected material was investigated by wavelength, time and spatially resolved imaging methods. Careful analysis of images of species selected optical emission yielded estimates of the mean velocities of the Li+ ions...

1999
A. Z. Maksymowicz

The random deposition model must be enriched to reflect the variety of surface roughness due to some material characteristics of the film growing by vacuum deposition or sputtering. The essence of the computer simulation in this case is to account for possible surface migration of atoms just after the deposition, in connection with binding energy between atoms (as the mechanism provoking the di...

1999
H. H. Hamdeh S. A. Oliver Z. Q. Gao

Films of Fee.79Geez1 with thicknesses of 300 nm were synthesized by ion beam sputtering, and were annealed at temperatures from 200 to 550 “C. The materials were characterized by x-ray diffractometry, Mdssbauer spectrometry, vibrating sample magnetometry, ferromagnetic resonance spectrometry, and electrical resistivity measurements. The as-prepared materials comprised chemically disordered bee ...

Journal: :ACS nano 2012
Toma Susi Jani Kotakoski Raul Arenal Simon Kurasch Hua Jiang Viera Skakalova Odile Stephan Arkady V Krasheninnikov Esko I Kauppinen Ute Kaiser Jannik C Meyer

By combining ab initio simulations with state-of-the-art electron microscopy and electron energy loss spectroscopy, we study the mechanism of electron beam damage in nitrogen-doped graphene and carbon nanotubes. Our results show that the incorporation of nitrogen atoms results in noticeable knock-on damage in these structures already at an acceleration voltage of 80 kV, at which essentially no ...

2000
V. Craciun R. K. Singh

Ba0.5Sr0.5TiO3 ~BST! thin films grown on Si by an in situ ultraviolet-assisted pulsed laser deposition ~UVPLD! technique exhibited significantly higher dielectric constant and refractive index values and lower leakage current densities than films grown by conventional PLD under similar conditions. X-ray photoelectron spectroscopy ~XPS! investigations have shown that the surface layer of the gro...

1999
T. Pradeep Jianwei Shen Chris Evans

The value of low-energy ionic collisions for selective surface analysis is shown by the fact that reactive scattering allows differentiation of isomeric chemisorbates. Reactions of Cr•+ and Cr-containing cations at chlorobenzyl mercaptan (CBM) monolayers on Au surfaces show different reaction products, depending on the position of chlorine substitution in the phenyl ring. The chlorine atom abst...

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