نتایج جستجو برای: splitting field
تعداد نتایج: 818101 فیلتر نتایج به سال:
A fast, robust, and accurate operator splitting method for phase-field simulations of crystal growth
In this paper we propose a fast, robust, and accurate operator splitting method for phase-field simulations of dendritic growth in both twoand three-dimensional space. The proposed method is based on operator splitting techniques. We split the governing phase-field equation into three parts: the first equation is calculated by using an explicit Euler’s method. The second is a heat equation with...
Enhanced plasmonic fields are a promising way to increase the efficiency of photocatalytic water splitting. The availability of atomically thin materials opens up completely new opportunities. We report photocatalytic water splitting on ultrathin CdSe nanoplatelets placed in plasmonic nanogaps formed by a flat gold surface and a gold nanoparticle. The extreme field intensity created in these ga...
We measured Kondo-assisted tunneling via C60 molecules in contact with ferromagnetic nickel electrodes. Kondo correlations persisted despite the presence of ferromagnetism, but the Kondo peak in the differential conductance was split by an amount that decreased (even to zero) as the moments in the two electrodes were turned from parallel to antiparallel alignment. The splitting is too large to ...
We discover a fundamental mechanism for the sharp increase in the diffusion rate of the motion of a charged particle in a uniform magnetic field when a time-periodic electricfield propagating orthogonally to the magnetic field is slightly tilted. It is associated with the degeneracies of the underlying motion; in fact, a two-degree of freedom mechanism of instability induces this behaviour. Unf...
We perform far-field spectroscopy of infrared metal antennas on silicon oxide layers of different thickness, where we find a splitting of the plasmonic resonance. This splitting can result in a transparency window, corresponding to suppression of antenna scattering, respectively "cloaking" of the antenna. Backed up by theory, we show that this effect is caused by strong coupling between the met...
By the application of an in-plane magnetic field, we demonstrate control of the fine structure polarisation splitting of the exciton emission lines in individual InAs quantum dots. The selection of quantum dots with certain barrier composition and confinement energies is found to determine the magnetic field dependent increase or decrease of the separation of the bright exciton emission lines, ...
Writing f(T ) = (T − r1) · · · (T − rn), the splitting field of f(T ) over K is K(r1, . . . , rn). Each σ in the Galois group of f(T ) over K permutes the ri’s since σ fixes K and therefore f(r) = 0⇒ f(σ(r)) = 0. The automorphism σ is completely determined by its permutation of the ri’s since the ri’s generate the splitting field over K. A permutation of the ri’s can be viewed as a permutation ...
Reflection-absorption infrared spectroscopy (RAIRS) of nitrous oxide (N2O) thin films is shown to provide an independent means of observing the spontelectric state, the first new structural phase of matter, with unique electrical properties, to have emerged in decades. The presence of a spontaneous and powerful static electric field within the film, the defining characteristic of spontelectric ...
Writing f(X) = (X− r1) · · · (X− rn), the splitting field of f(X) over K is K(r1, . . . , rn). Each σ in the Galois group of f(X) over K permutes the ri’s since σ fixes K and therefore f(r) = 0⇒ f(σ(r)) = 0. The automorphism σ is completely determined by its permutation of the ri’s since the ri’s generate the splitting field over K. A permutation of the ri’s can be viewed as a permutation of th...
In zero magnetic field, conductance measurements of clean one-dimensional (1D) constrictions defined in GaAs/AlGaAs heterostructures show twenty-six quantized ballistic plateaux, as well as a structure close to 0.7(2e 2 /h). In an in-plane magnetic field all the 1D subbands show Zeeman splitting and in the wide channel limit the g-factor is | g |= 0.4, close to that of bulk GaAs. For the last s...
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