Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum wells show a tenfold increase of the spin-relaxation rate as a function of applied electric field from 20 to 80 kV cm at 170 K and indicate a similar variation at 300 K, in agreement with calculations based on the Rashba effect. Spin relaxation is almost field-independent below 20 kV cm reflecting quantum well interface as...

Growing technological challenges and increasing costs are gradually guiding MOSFET scaling to an end, which drives the search for alternative technologies as well as computational principles based on electron spin. We investigate spin relaxation in (001) silicon-on-insulator structures by using the effective k·p Hamiltonian, with the spin degree of freedom, written at the vicinity of the X-poin...

We present local probe results on the honeycomb lattice antiferromagnet Ba(3)CuSb(2)O(9). Muon spin relaxation measurements in a zero field down to 20 mK show unequivocally that there is a total absence of spin freezing in the ground state. Sb NMR measurements allow us to track the intrinsic susceptibility of the lattice, which shows a maximum at around 55 K and drops to zero in the low-tempera...

The phase relaxation caused by scattering off spin wave excitations in disordered ferromagnetic films is considered. In the case that the spin wave spectrum is gapped, it is shown that the corresponding phase relaxation rate at temperatures above the gap follows a linear dependence in both two and three dimensions, similar to what has been found previously for clean systems. In the absence of t...

To determine the amount of iron deposits in the basal ganglia, we examined 13 healthy volunteers with a 1.5 T MRI system using three transverse relaxation rates measured with two sequences. The transverse relaxation rates comprise the reversible contribution (R2') and irreversible contribution (R2) to a phase-reversal 180 degrees -pulse sequence. The transverse relaxation rates with the estimat...

Using the spin-hole coherent state representation and taking a long range antiferromagnetic Nèel order as a background of the localized spin degree part, we have studied the normal state behavior of the t-J model, and shown that a strongly short-range antiferromagnetic correlation of the localized spin degree part is responsible for the anomalous non-Korringa-like relaxation behavior of the pla...

The photophysical properties of the ferric catecholate spin-crossover compounds [(TPA)Fe(R-Cat)]X (TPA=tris(2-pyridylmethyl)amine; X=PF(6) (-), BPh(4) (-); R-Cat=catecholate dianion substituted by R=NO(2), Cl, or H) are investigated in the solid state. The catecholate-to-iron(III) charge-transfer bands are sensitive both to the spin state of the metal ion and the charge-transfer interactions as...

A theory is introduced for spin relaxation and spin diffusion of hopping carriers in a disordered system. For disorder described by a distribution of waiting times between hops (e.g., from multiple traps, site-energy disorder, and/or positional disorder) the dominant spin relaxation mechanisms in organic semiconductors (hyperfine, hopping-induced spin-orbit, and intrasite spin relaxation) each ...

We demonstrate single-shot readout of a silicon quantum dot spin qubit, and we measure the spin relaxation time T1. We show that the rate of spin loading can be tuned by an order of magnitude by changing the amplitude of a pulsed-gate voltage, and the fraction of spin-up electrons loaded can also be controlled. This tunability arises because electron spins can be loaded through an orbital excit...