The specific heat C of e-beam evaporated amorphous silicon (a-Si) thin films prepared at various growth temperatures T(S) and thicknesses t was measured from 2 to 300 K, along with sound velocity v, shear modulus G, density n(Si), and Raman spectra. Increasing T(S) results in a more ordered amorphous network with increases in n(Si), v, G, and a decrease in bond angle disorder. Below 20 K, an ex...
