We have investigated the role of temperature in the degradation of GaN High-Electron-Mobility-Transistors (HEMTs) under high-power DC stress. We have identified two degradation mechanisms that take place in a sequential manner: the gate leakage current increases first, followed by a decrease in the drain current. Building on this observation, we demonstrate a new scheme to extract the activatio...

Resonant tunneling diodes ~RTDs! are one of the most promising quantum effect devices for practical applications. The presence of negative differential resistance at room temperature allows RTDs to be used as memory storage devices. Recent work has demonstrated that the buildup of electron charge in the well can have a strong influence on the bias required to switch between stable states. In ad...

Using an InAs/GaSb composite quantum well, we demonstrate an enhancement mode single electron transistor. With a Hall bar geometry, we show that the device undergoes a transition from accumulation of two-dimensional (2D) holes in GaSb to a complete depletion and finally to an inversion layer of 2D electrons in InAs. When the top-gate area is reduced to nanometer scale, the inversion electrons a...

We report a multi tunnelling junction characteristic in P-type porous silicon core coated with thin film platinum silicide. Detailed analysis of electron transport in this device admits the existence of a structure like a twodimensional Multi Tunnelling Junctions (2D-MTJ) clearly originate from the sharp edge of created platinum silicide on porous surface. Furthermore, using SIMON simulator, el...