The effect of silicon concentration and annealing temperature on terbium luminescence was investigated for thin silicon rich silicon oxide films. The structures were deposited by means of plasma enhanced chemical vapor deposition. The structural properties of these films were investigated by Rutherford backscattering spectrometry, transmission electron microscopy and Raman scattering. The optic...

Articles you may be interested in A model of electrical conduction across the grain boundaries in polycrystalline-silicon thin film transistors and metal oxide semiconductor field effect transistors Polycrystalline silicon thin-film transistors with location-controlled crystal grains fabricated by excimer laser crystallization Appl. Improvement of the electrical performance in metal-induced lat...

Toward mid-infrared (mid-IR) silicon microphotonic circuits, we demonstrate broadband on-chip silicon structures, such as: (i) straight and bent waveguides and (ii) beam splitters, utilizing an air-clad pedestal configuration which eliminates the need for typical mid-IR-lossy oxide cladding. We illustrate a sophisticated fabrication process that can create high-quality pedestal structures in cr...

Silicon nanocrystals embedded in a silicon-rich silicon oxide matrix doped with Er ions have been fabricated by electron cyclotron resonance plasma-enhanced chemical vapor deposition. Indirect excitation of erbium photoluminescence via silicon nanocrystals has been investigated. Temperature quenching of the photoluminescence originating from the silicon nanocrystals and the erbium ions has been...

Microstructures of oxide scales thermally formed on single-crystal silicon carbide were investigated using transmission electron microscopy. The oxide scales were formed on the Si-face of 6H-SiC at 1273-1473 K in dry oxygen. Spherical patterns were observed on the surfaces of the oxidized samples by an optical microscope in some regions. In these regions, cross-sectional transmission electron m...

Silicon nanocrystals embedded in a silicon-rich silicon oxide matrix doped with Er3+ ions have been fabricated by electron cyclotron resonance plasma-enhanced chemical vapor deposition. Indirect excitation of erbium photoluminescence via silicon nanocrystals has been investigated. Temperature quenching of the photoluminescence originating from the silicon nanocrystals and the erbium ions has be...