We correct the value for the nonlinear Kerr effect of the silicon-rich nitride waveguide presented in [Opt. Express23, 25828 (20152015)].

We demonstrate second- and third-harmonic generation in a centrosymmetric CMOS-compatible material using ring resonators and integrated optical waveguides. The χ(2) response is induced by using the nanoscale structure of the waveguide to break the bulk symmetry of silicon nitride (Si3N4) with the silicon dioxide (SiO2) cladding. Using a high-Q ring resonator cavity to enhance the efficiency of ...

This paper reports on the effective passivation of interstitial iron in p-type boron-doped silicon via annealing with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The concentration of interstitial iron was shown to reduce by more than 90% after a 30-minute anneal at 600 – 900C with the silicon nitride films present. The most effective hydrogenation of iron was found ...

Electron charging and discharging were produced in metal-insulator-semiconductor structures containing amorphous silicon quantum dots ~a-Si QDs! by increasing the applied voltage in a stepwise fashion without changing its sign. The metal-insulator-semiconductor structure was fabricated using an insulating silicon nitride film containing a-Si QDs by plasma-enhanced chemical vapor deposition. Thi...

Solid-state nanopores can be used to detect nucleic acid structures at the single molecule level. An e-beam has been used to fabricate nanopores in silicon nitride and silicon dioxide membranes, but the pore formation kinetics, and hence its final structure, remain poorly understood. With the aid of high-resolution TEM imaging as well as TEM tomography we examine the effect of Si3N4 material pr...

Dip Pen Nanolithography (DPN) is a lithographic technique that allows direct deposition of chemicals, metals, biological macromolecules, and other molecular “inks” with nanometer dimensions and precision. This paper addresses recent developments in the design and demonstration of high-density multiprobe DPN arrays. High-density arrays increase the process throughput over individual atomic force...

Ring resonators with TiO2 core confinement factors from 0.07 to 0.42 are fabricated and measured for thermal sensitivity achieving -2.9 pm/K thermal drift in the best case. Materials used are CMOS compatible (TiO2, SiO2 and Si3N4) on a Si substrate. The under discussed role of stress in thermo-optic behavior is clearly observed when contrasting waveguides buried in SiO2 to those with etched sid...