The growth of III-V semiconductors on silicon would allow the integration of their superior (opto-)electronic properties with silicon technology. But fundamental issues such as lattice and thermal expansion mismatch and the formation of antiphase domains have prevented the epitaxial integration of III-V with group IV semiconductors. Here we demonstrate the principle of epitaxial growth of III-V...

A simple galvanic reduction for direct growth of Au nanowires on silicon wafers is developed. The nanowires were prepared by reacting HAuCl4aq with Sns in the presence of CTACaq (cetyltrimethylammonium chloride) and NaNO3aq, which were important to the product morphology development. The nanowire diameter was 50-100 nm, and the length was more than 20 microm.

Arrays of GaN-based nanowires have been synthesized on patterned silicon without a catalyst. The spatial density, length and average radius of the nanowires can be well-controlled. The GaN core contains two semipolar facets and a controllable polar facet. The nanowire heterostructures exhibit excellent laser behavior.

Organically modified silica coatings were prepared on metal nanowires using a variety of silicon alkoxides with different functional groups (i.e., carboxyl groups, polyethylene oxide, cyano, dihydroimidazole, and hexyl linkers). Organically modified silicas were deposited onto the surface of 6-μm-long, ∼300-nm-wide, cylindrical metal nanowires in suspension by the hydrolysis and polycondensatio...

Silicon nanowire possesses great potential as the material for renewable energy harvesting and conversion. The significantly reduced spectral reflectivity of silicon nanowire to visible light makes it even more attractive in solar energy applications. However, the benefit of its use for solar thermal energy harvesting remains to be investigated and has so far not been clearly reported. The purp...

Herein, we prepare vertical and single crystalline porous silicon nanowires (SiNWs) via a two-step metal-assisted electroless etching method. The porosity of the nanowires is restricted by etchant concentration, etching time and doping lever of the silicon wafer. The diffusion of silver ions could lead to the nucleation of silver nanoparticles on the nanowires and open new etching ways. Like po...

We demonstrate a novel method to fabricate an axial p-n junction inside <111> oriented short vertical silicon nanowires grown by molecular beam epitaxy by combining ion implantation with in-situ doping. The lower halves of the nanowires were doped in-situ with boron (concentration ~1018cm-3), while the upper halves were doubly implanted with phosphorus to yield a uniform concentration of 2 × 10...

Silicon nanowire interconnects are dielectrophoretically assembled, reconfigured, and disassembled between gold electrodes in benzyl alcohol. Assembly of up to 55 μm long nanowires is demonstrated. Conductance enhancement is observed in the presence of single nanowires trapped between submerged electrodes. Phase inversion of electrode potentials allows the reversible reconfiguration of nanowire...

Gold and platinum nanowires have been grown on a silicon dioxide surface between two microfabricated electrodes from an electrolysis process under an AC signal with a DC offset. In the process, the anode electrode acted as a sacrificing layer and oxidized to metal ions. The metal ions were reduced to particles and aligned along the electric field forming nanowires connected with the cathode. Gr...

Detection and quantification of biological and chemical species are central to many areas of healthcare and the life sciences, ranging from diagnosing disease to discovery and screening of new drug molecules. Semiconductor nanowires configured as electronic devices have emerged as a general platform for ultra-sensitive direct electrical detection of biological and chemical species. Here we desc...