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Silicon carbide (SiC) is an indirect wide band gap semiconductor that utilized in many industrial applications due to its extreme physical properties. SiC nanoparticles (NPs) exhibit a versatile surface chemistry, fluoresce from the ultraviolet near-infrared spectral ranges, and their sizes can be tuned one hundreds of nanometers. Yet, fluorescent NPs have received far less attention by scienti...

Fine-grained tungsten carbide copper (WC-Cu) cemented carbide was sintered via spark plasma sintering at 1773K using a fine WC powder with a mean particle size of 0.11 mm. The mechanical properties were compared with tungsten carbide cobalt (WC-Co) cemented carbide and a binderless WC-sintered material. The Vickers hardness and fracture toughness obtained by the indentation fracture method for ...

In this letter, the uniform 4H silicon carbide (SiC) mesopores was fabricated by pulsed electrochemical etching method. The length of the mesopores is about 19 μm with a diameter of about 19 nm. The introduction of pause time (T off) is crucial to form the uniform 4H-SiC mesopores. The pore diameter will not change if etching goes with T off. The hole concentration decreasing at the pore tips d...

The rapid solidification of liquid silicon carbide (SiC) is studied by molecular dynamic simulation using the Tersoff potential. The structural properties of liquid and amorphous SiC are analyzed by the radial distribution function, angular distribution function, coordination number, and visualization technology. Results show that both heteronuclear and homonuclear bonds exist and no atomic seg...

We demonstrate strong nonlinearities of n2=8.6±1.1×10(-15)  cm2 W(-1) in single-crystal silicon carbide (SiC) at a wavelength of 2360 nm. We use a high-confinement SiC waveguide fabricated based on a high-temperature smart-cut process.

Abstract—This paper presents a model to predict the depth of penetration in polycrystalline ceramic material cut by abrasive waterjet. The proposed model considered the interaction of cylindrical jet with target material in upper region and neglected the role of threshold velocity in lower region. The results predicted with the proposed model are validated with the experimental results obtained...

In this paper, for the first time, the square-shaped extended source tunneling field-effect transistor (SES TFET) by means of the silicon carbide polytype (3C-SiC) and dopant pocket layer has been presented. By inserting the silicon carbide polytype as substrate and n-type pocket in the channel at the source edge, on-current is increased by about 10 times compared with the conventional SES TFET...

Abstract Silicon-bonded silicon carbide (SBSC) porous ceramics had been prepared by mixing two different particle size of SiC powder (coarse and fine) as aggregates for ceramics, adding metallic Si the binder phase firing at 1450 °C under argon atmosphere. Various combinations mixtures consisting packing density were prepared, samples investigated to understand apparent porosity, bending streng...