Hot electrons and holes created at Ag and Cu surfaces by adsorption of thermal hydrogen and deuterium atoms have been measured directly with ultrathin metal film Schottky diode detectors on Si(111). When the metal surface is exposed to these atoms, charge carriers are excited at the surface, travel ballistically toward the interface, and have been detected as a chemicurrent in the diode. The cu...

Experimental results on 60GHz band signal transmission through ECOR (Electromagnetic Coupling of Open-Ring Resonators) are shown. Through 200μm sapphire substrate, 60-70GHz band signal are transmitted with 58.9% transmission efficiency and 7.4GHz bandwidth. However, the transmission band was shifted about 10GHz higher frequency. The reason is under investigation. ECOR technology is extended to ...

Many types of materials such as inorganic semiconductors have been employed as detectors for nuclear radiation, the importance of which has increased significantly due to recent nuclear catastrophes. Despite the many advantages of this type of materials, the ability to measure direct cellular or biological responses to radiation might improve detector sensitivity. In this context, semiconductin...

By means of the microscopic transport description supplied by a semiclassical 2D Monte Carlo simulator, we provide an in depth explanation of the operation (based on electrostatic effects) of the nanoscale unipolar rectifying diode, so called self-switching diode (SSD), recently proposed in [A. M. Song, M. Missous, P. Omling, A. R. Peaker, L. Samuelson, and W. Seifert, Appl. Phys. Lett. 83, 188...

Whereas SiC switches have the overall lowest dynamic losses, they show higher static losses due to the lack of conductivity modulation and the necessary chip size limitations due to the still high SiC base material price. The frequency dependence of the total losses of the various 1200V configurations (Si-IGBT + Si freewheeling diode, Si IGBT + SiC Schottky diode, SiC-JFET cascode plus internal...

We present a novel resistance-compensated I-V method to extract the series resistance, ideality factor, barrier height and built-in potential of metal-semiconductor diode. show that reduced equation arises from unique but hitherto unreported symmetry in Schottky when it is written as an ordinary differential equation. In spite intense mathematical justification, we how this new directly applica...

Schottky diode with 6H-SiC/MEH-PPV/Al polymer interface was prepared and characterized by using current-voltage data in the temperature range of 80-400K. Important parameters produced such as ideality factor, barrier height saturation current were calculated. In addition, series resistance calculated Cheung Norde methods. characteristics discussed comparing each other literature. Strong depende...

Relatively long (30 µm) high quality ZnO nanowires (NWs) were grown by the vapor-liquid-solid (VLS) technique. Schottky diodes of single NW were fabricated by putting single ZnO NW across Au and Pt electrodes. A device with ohmic contacts at both the sides was also fabricated for comparison. The current-voltage (I-V) measurements for the Schottky diode show clear rectifying behavior and no reve...