Abstract Modeling of the electrostatic potential for fully depleted (FD) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) is presented in this article. The modeling based on analytical solution two-dimensional Poisson’s equation obtained by using homotopy perturbation method (HPM). HPM with suitable boundary conditions results so-called general and closed-fo...

Nanopowders of Al2O3, TiO2 and MgO were fabricated by high energy ball milling. The simutaneous synthesis and sintering of nanostuctured MgAl2O4-Mg3Al4Ti3O25 composite was investigated by the pulsed current activated sintering process. The advantage of this process is that it allows very quick densification to near theoretical density and inhibition of grain growth. A highly dense nanostructure...

Due to polarization of ions in crystals with noncentral symmetry, such as ZnO, GaN, and InN, a piezoelectric potential (piezopotential) is created in the crystal when stress is applied. Electronics fabricated using the inner-crystal piezopotential as a gate voltage to tune or control the charge transport behavior across a metal/semiconductor interface or a p-n junction are called piezotronics. ...