We have experimentally investigated single-port injection-triggered switching in a new class of semiconductor ring lasers with integrated gain, phase and passive waveguide sections as a building-block for all-optical signal processing such as high-speed analog-to-digital conversion. ©2009 Optical Society of America OCIS codes: (250.3140) Integrated optoelectronic circuits; (140.3560) Lasers, ring

Laser light excitation of fluorescent markers offers highly sensitive and specific analysis for bio-medical or chemical analysis. To profit from these advantages for applications in the field or at the point-of-care, a plastic lab-on-a-chip with integrated organic semiconductor lasers is presented here. First order distributed feedback lasers based on the organic semiconductor tris(8-hydroxyqui...

Synchronization of chaotic oscillators is of high current interest in various areas of science. Semiconductor laser systems offer a great potential for experimental studies of synchronization phenomena, because of well-controllable parameters, wellstudied nonlinear dynamical behavior and their broad spectrum of applications. We investigate chaos-synchronization of two unidirectionally coupled s...

Twisted relativistic light pulses with a strong torque and an ultrahigh orbital angular momentum density can in principle be created by shining light pulses onto a specially design thin metal foil, report scientists in China. Theoretical analysis and simulations by Yin Shi and co-workers at the Shanghai Institute of Optics and Fine Mechanics predict that when intense pulses with planar wavefron...

We analyze multi-longitudinal-mode semiconductor lasers experimentally. We show that the intensity of each mode displays large amplitude oscillations but obeys a highly organized antiphase dynamics leading to an almost constant total intensity output. For each mode, regular switching is observed in the megahertz range, while the optical frequency as a function of time follows a well defined seq...

An integrated tunable C band laser fabricated in a commercial CMOS foundry is discussed. The laser is embedded in the silicon chip, and is hermetically sealed. Preliminary optical characterization results are presented. OCIS codes: (250.5960) Semiconductor Lasers; (250.5300) Photonic Integrated Circuits; (140.3600) Lasers, tunable

The unstable emission of semiconductor lasers due to delayed optical feedback is characterized by combined intensity and frequency dynamics. Nevertheless, real-time experimental investigations have so far been restricted to measurements of intensity dynamics only. Detailed analysis and comparison with numerical models, therefore, have suffered from limited experimental information. Here, we rep...

The frequency dynamics of gain-switched singlemode semiconductor lasers subject to optical injection is investigated. The requirements for low time jitter and reduced frequency chirp operation are studied as a function of the frequency mismatch between the master and slave lasers. Suppression of the power overshoot, typical during gain-switched operation, can be achieved for selected frequency ...

The temperature dependence of below-threshold emission from multiple quantum well semiconductor lasers is well characterized by a power law, in excellent agreement with Landau-Ginzburg theory of second-order phase transitions. We thereby show that it is the temperature dependence of net gain and not that of nonradiative recombination which primarily determines temperature sensitivity of thresho...

The discovery of III-V oxidation and subsequent application of oxide technology to the fabrication of semiconductor lasers are reviewed. Work on lateral oxidation and the application of laterally oxidized layers to form optically and electrically confining apertures is discussed, as well as the commercially-significant use of lateral oxides in vertical-cavity surface-emitting lasers.