نتایج جستجو برای: semiconducting silicon

تعداد نتایج: 86286  

Journal: :ACS nano 2012
Albert C Fahrenbach Srinivasan Sampath Dattatray J Late Jonathan C Barnes Samuel L Kleinman Nicholas Valley Karel J Hartlieb Zhichang Liu Vinayak P Dravid George C Schatz Richard P Van Duyne J Fraser Stoddart

The self-assembly and solid-state semiconducting properties of single crystals of a trisradical tricationic complex composed of the diradical dicationic cyclobis(paraquat-p-phenylene) (CBPQT(2(•+))) ring and methyl viologen radical cation (MV(•+)) are reported. An organic field effect transistor incorporating single crystals of the CBPQT(2(•+))⊂MV(•+) complex was constructed using lithographic ...

2017
R. Siddheswaran R. Medlín P. Calta P. Šutta

Silicon multi-layered thin films are subject of the recent research to play a key role in solar cell technology. The morphological analyses of the textured nc-Si/a-SiO2 multilayer semiconducting thin films are significant for the fabrication of solar cells. Besides the intrinsic properties, the structural properties have a great impact on the performance based on the quality of the interface be...

Journal: :Langmuir : the ACS journal of surfaces and colloids 2006
Manish Dubey Irina Gouzman Steven L Bernasek Jeffrey Schwartz

Differential charging is often regarded as a problem in X-ray photoelectron spectroscopic studies, especially for insulating or partially conducting samples. Application of a positive bias can reduce the effect of differential charging by attracting stray electrons from the system, thereby compensating for the electron loss. On the other hand, differential charging effect can be enhanced by the...

Journal: :The journal of physical chemistry. B 2005
Yiming Li Shu Peng David Mann Jien Cao Ryan Tu K J Cho Hongjie Dai

A correlation is observed between the diameters (d) of single-walled carbon nanotubes and the percentages of metallic and semiconducting tubes synthesized at 600 degrees C by plasma-assisted chemical vapor deposition. Small tubes (d approximately 1.1 nm) show semiconductor percentages that are much higher than expected for a random chirality distribution. Density functional theory calculations ...

2014
Oriol Lopez-Sanchez Esther Alarcon Llado Volodymyr Koman Anna Fontcuberta i Morral Aleksandra Radenovic Andras Kis

Two-dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics. Monolayers of semiconducting transition metal dichalcogenides MoS2 or WSe2 have been proposed as promising channel materials for field-effect transistors. Their high mechanical flex...

2015
Wen-Zhe Yu Jia-An Yan Shang-Peng Gao

One-side semihydrogenated monolayers of carbon, silicon, germanium, and their binary compounds with different configurations of hydrogen atoms are investigated by density functional theory. Among three considered configurations, zigzag, other than the most studied chair configuration, is energetically the most favorable structure of one-side semihydrogenation. Upon semihydrogenation, the semime...

2015
E. Durgun S. Tongay

Unusual physical properties of single-wall carbon nanotubes have started a search for similar tubular structures of other elements. In this paper, we present a theoretical analysis of single-wall nanotubes of silicon and group-III-V compounds. Starting from precursor graphenelike structures we investigated the stability, energetics, and electronic structure of zigzag and armchair tubes using th...

Journal: :Nano letters 2014
Saptarshi Das Richard Gulotty Anirudha V Sumant Andreas Roelofs

In this article, we report only 10 atomic layer thick, high mobility, transparent thin film transistors (TFTs) with ambipolar device characteristics fabricated on both a conventional silicon platform as well as on a flexible substrate. Monolayer graphene was used as metal electrodes, 3-4 atomic layers of h-BN were used as the gate dielectric, and finally bilayers of WSe2 were used as the semico...

2011
László Dózsa Štefan Lányi Vito Raineri Filippo Giannazzo Nikolay Gennadevich Galkin

Semiconducting CrSi2 nanocrystallites (NCs) were grown by reactive deposition epitaxy of Cr onto n-type silicon and covered with a 50-nm epitaxial silicon cap. Two types of samples were investigated: in one of them, the NCs were localized near the deposition depth, and in the other they migrated near the surface. The electrical characteristics were investigated in Schottky junctions by current-...

2004
Quanhong Yang Weihua Xu Takashi Kyotani Akira Tomita

Introduction With the miniaturization of silicon devices used as semi-conducting devices now appearing its limits, development of other kinds of devices in smaller size (nanodevices) become an urgent task for next generation of electronics devices. Low dimensional carbon materials, especially carbon nanotubes (CNTs), are believed to be one of the most potential candidates for silicon. Constitut...

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