Self-assembled nanocomposites have been extensively investigated due to the novel properties that can emerge when multiple material phases are combined. Growth of epitaxial nanocomposites using lattice-mismatched constituents also enables strain-engineering, which can be used to further enhance material properties. Here, we report self-assembled growth of highly tensile-strained Ge/In0.52Al0.48...

The theme of the TEXONO research program is on the studies of low energy neutrino and dark matter physics. The current goals of the TEXONO research program are on the development of germanium detectors with sub-keV sensitivities to realize experiments on neutrino magnetic moments, neutrino-nucleus coherent scattering, as well as WIMP dark matter searches. An energy threshold of 220 eV was achie...

Low-temperature germanium to silicon wafer bonding was demonstrated by in situ radical activation and bonding in vacuum. After low temperature direct bonding of Ge to Si followed by annealing at 200 and 300 C, advanced imaging techniques were used to characterize the bonded interface. The feasibility of transferring hydrogen-implanted germanium to silicon with a reduced thermal budget is also d...

Sixteen isomers of heterometallic germanium clusters have been analysed in this review. There are two types of isomerism, distortion (x 15) and cis – trans (x 1) and cis – isomer contains two crystallographically independent molecules. Distortion isomers, differing only by degree of distortion in Ge – L, Ge – M (M = metal) distances and L – Ge L (L = ligand) angles. The data are discussed with ...

High resolution X-ray Photoelectron Spectroscopy (XPS) was used to analyze thin layers of germanium oxide grown on germanium substrates under various conditions. The results reveal the presence of high density of electron states located at the oxide /germanium interface that lead to the energy band bending. The surface of native oxide layers and that of thin oxide layer grown under dry oxygen c...

The two-electron reduction of a Group 14-element(I) complex [RË⋅] (E=Ge, R=supporting ligand) to form a novel low-valent dianion radical with the composition [RË:]˙(2-) is reported. The reaction of [LGeCl] (1, L=2,6-(CH=NAr)2C6H3, Ar=2,6-iPr2C6H3) with excess calcium in THF at room temperature afforded the germylidenediide dianion radical complex [LGe]˙(2-)⋅Ca(THF)3(2+) (2). The reaction procee...

We report our results of continuous illumination of Ge46S54 chalcogenide glass films with bandgap light in air. The outcome of this process is the formation of Ge–S backbone depleted in germanium. We relate this to consumption of some of the germanium available in the initial material due to the occurrence of a photoinduced oxidation. This is proved using energy dispersion spectroscopy which sh...

The identification of scalable processes that transfer random mixtures of single-walled carbon nanotubes (SWCNTs) into fractions featuring a high content of semiconducting species is crucial for future application of SWCNTs in high-performance electronics. Herein we demonstrate a highly efficient and simple separation method that relies on selective interactions between tailor-made amphiphilic ...

Herein, we describe the controlled growth of 1 dimensional germanium nanostructures from high aspect ratio nanowires (>10 microns in length) to shorter aspect nanorods (100 nm in length) via a simple pyrolysis method. The synthetic route involves the thermal decomposition of selected germanium precursors by dropping a solution in a high boiling point solvent directly onto a pre-heated Si wafer ...

Achieving quantum dot self-assembly at precise pre-defined locations is of vital interest. In this work, a novel physical method for producing germanium quantum dots on silicon using nanoindentation to pre-define nucleation sites is described. Self-assembly of ordered ~10 nm height germanium quantum dot arrays on silicon substrates is achieved. Due to the inherent simplicity and elegance of the...