We report the fabrication of high-performance, printed, n-channel organic field-effect transistors (OFETs) based on an N,N-dialkyl-substituted-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) derivative, PDI-RCN2, optimized by the solvent-vapor annealing (SVA) process. We performed a systematic study on the influence of solubility and the chemical structure of a solvent used for the SVA pr...

Thick film 5 m thick semiconducting polymer diodes incorporating poly triarylamine PTAA have been produced and applied as direct x-ray detectors. Experiments determined that a rectifying diode behavior persists when increasing the thickness of the active layer above typical thin film thicknesses 1 m , and the electrical conduction mechanism of the diodes has been identified. Direct current and ...

Spin-coating has been used extensively in the fabrication of electronic devices; however, the effects of the processing parameters have not been fully explored. Here, we systematically characterize the effects of the spin-coating time on the microstructure evolution during semiconducting polymer solidification in an effort to establish the relationship between this parameter and the performance...

Cu(In,Ga)Se2 (CIGS) are promising materials for thin film photovoltaic applications. This work studies the epitaxial growth of CIGS single crystal films on GaAs substrates of various orientations and characterizes the properties of the thin films. A surprising finding is the strong tendency of film surfaces to facet to {112} planes. The work attempted to establish the connections between the fi...

Cr3Al shows semiconducting behavior that has not been explained previously. We used density functional theory calculations, performed at the Cornell NanoScale Facility to study the effect of chemical ordering and magnetism on the semiconducting behavior. The calculations show that the proposed chemically ordered Cr3Al structure in the Cr1-xAlx phase diagram is the lowest energy structure of tho...

Charge Transport in Organic Field-Effect Transistors In article number 2101701, Lukas Renn, Thomas Weitz, and co-workers develop organic transistor devices consisting of a monolayer-thin perylene-diimide n-type semiconductor on rectangular shaped h-BN flake. For some the semiconducting film is encapsulated between layers by stamping an additional flake top. transport measurements show signs int...