In this work, the physical and electrical properties of vertical GaN Schottky diodes were investigated. Cathodo-luminescence (CL), micro-Raman spectroscopy, SIMS, current-voltage (I-V) measurements performed to better understand effects parameters, for example structural defects doping level inhomogeneity, on diode performances. Evidence dislocations in epilayer was spotted thanks CL measuremen...

The Ag-BaF2/GaSb Schottky diode measurement has been investigated by using voltage versus current (I-V) at different temperatures, capacitance (C-V) and hotoelectric measurements on n-type GaSb carrier per cm-3, Current – were used to study the interface layer. Near ideal characteristics observed for contact with ideality factor values (1.21-1.451). barrier height donor concentration (Nd) have ...