We report on the first experimental evidence of a Schottky barrier effect produced by the action of light in an otherwise purely Ohmic contact between a nominally undoped photorefractive titanosillenite Bi12TiO20 crystal and a transparent conductive SnO2 electrode. The photorefractive crystal is sandwiched between two transparent electrodes and a Schottky barrier is built up in the illuminated ...

The improvement of the metal/InGaAs interface is essential for the future application of InGaAs metal source/drain Schottky-barrier metal-oxide-semiconductor field-effect-transistors. In this article, on In0.53Ga0.47As, the authors examine the recently proposed method of inserting an ultrathin insulator to modulate the effective Schottky-barrier height SBH at the metal/semiconductor interface. ...

Zinc oxide nanostructures are deposited on glass substrates in the presenceof oxygen reactive gas at room temperature using the radio frequency magnetronsputtering technique. In this research, the effects of zinc oxide sputtering pressure on thenanostructure properties of the deposited layer are investigated. The deposition pressurevaries from 7.5 to 20.5 mTorr. AFM resu...

Large attention has been devoted worldwide to the investigation of hydrogen sensors based on various Schottky diodes. We prepared graphite semimetal Schottky contacts on polished n-InP and n-GaN wafers partly covered with nanoparticles of catalytic metals Pd or Pt by applying colloidal graphite. Metal nanoparticles were deposited electrophoretically from colloids prepared beforehand. Deposited ...

Nanoscale Schottky barrier MOSFETs (SBFETs) are explored by solving the two-dimensional Poisson equation self-consistently with a quantum transport equation. The results show that for SBFETs with positive, effective metal-semiconductor barrier heights, the on-current is limited by tunneling through a barrier at the source. If, however, a negative metal-semiconductor barrier height could be achi...

1. ABSTRACT. * A technique incorporating a p+ doping spike at the silicide/Si interface to reduce the effective Schottky barrier of the silicide infrared detectors and thus extend the cutoff wavelength has been developed. In contrast to previous approaches which relied on the tunneling effect, this approach utilizes a thinner doping spike (< 2 nm) to take advantages of the strong Schottky image...

We have investigated the electrical and microstructural properties of Se Schottky contacts to n-type Si before and after rapid thermal annealing (RTA) at temperatures in the range of 100­200°C for 30 s under N2 ambient. The forward and reverse leakage currents increased with increasing RTA temperature following which the barrier heights decreased from 0.71 to 0.60 eV before and after annealing ...

In this paper, fabrication and study of electronic properties of Au/methyl-red/Ag surface type Schottky diode by current-voltage (I-V) method has been reported. The I-V characteristics of the Schottky diode showed the good rectifying behavior. The values of ideality factor n and barrier height b of Au/methyl-red/Ag Schottky diode were calculated from the semi-log I-V characteristics and by usin...

   Hybrid polyaniline (PANI) based composites incorporating zinc sulfide (ZnS) nanoparticles (NPs) have been synthesized by using chemical oxidation technique. Schottky junction is constructed by depositing Polyaniline-zinc sulfide nanocomposite (PANI-ZnS NCs) on Au electrode. The results were compared with pure polyaniline. The I–V characteristics of the PANI-ZnS NCs hete...

We present a novel GaAs metal–semiconductor field-effect transistor (MESFET) with InGaP/GaAs multiple quantum barrier (MQB) capping and buffer layers. The MQB structure with (29; 6, 5, 7; 8, 8, 1; 6, 5, 7; 29) periodic stacks was designed to increase effective-potential-barrier height. We demonstrate that, by using the InGaP/GaAs MQB capping layer, the gate Schottky barrier performance and gate...