The wafer defects influence the yield of a wafer. The integrated circuits (IC) manufacturers usually use a Poisson distribution based c-chart to monitor the lot-to-lot wafer defects. As the wafer size increases, defects on wafer tend to cluster. When the c-chart is used, the clustered defects frequently cause erroneous results. The main objective of this study is to develop a hierarchical adapt...

This paper presents a study on laser intensity distributions where field enhancements occur due to scattering by spherical sapphire particles and under conditions of different wavelengths and substrate media. A sapphire micro particle concept is employed to determine the effects of light–particle interaction with a particle refractive index approaching 2 (n ≤ 2). Mie scattering software is used...

Two-dimensional electro-thermal simulations of GaN-based metal-semiconductor fieldeffect transistor are performed in the framework of the drift-diffusion model. The dependence of the hot spot temperature in transistors with many gates on the gate-to-gate pitch is studied. The case of SiC substrate is compared to the case of sapphire substrate. The ambient temperature effect on transistor perfor...

A novel attosecond multilayer mirror was designed at “water-window” wavelengths (from 2.33 nm to 4.36 nm) using a combination of TiO2 and ZnO, because both rutile TiO2 and wurtzite ZnO can be grown epitaxially together on the same c-plane sapphire substrate in spite of the different crystal structures of the molecule hexagonal units of rutile TiO2, wurtzite ZnO and sapphire. The theoretical cal...

Titanium and vanadium dioxide systems were selected to study the MOCVD process for the growth of oxide epitaxial films. Single-crystal Ti02 and V02 films in single and multilayered configurations have been successfully grown on sapphire (a-Al203) single-crystal substrates. Seven distinct epitaxial orientation relationships between the films and the substrates were observed. Discussion on these ...

Experimental measurements of wafer temperature in a single-wafer, lamp-heated chemical vapor deposition system were used to study the wafer temperature response to gas composition. A physically based simulation procedure for the process gas and wafer temperature was developed in which a subset of parameter values were estimated using a nonlinear, iterative parameter identification method, produ...

We evaluated the new UniCel DxH 800 hematology analyzer (Beckman Coulter, Miami, FL) vs the Cell-Dyn Sapphire (Abbott Diagnostics, Santa Clara, CA) using 156 pediatric specimens in Microtainer tubes (Becton Dickinson, Franklin Lakes, NJ). The CBC and differential showed good interinstrument correlation, including WBCs (r = 0.995), RBCs (r = 0.992), hemoglobin (r = 0.998), mean corpuscular volum...

We report the growth of high crystal quality Al0.3Ga0.7N directly on sapphire substrates with metalorganic vapour phase epitaxy. We studied the improvements in crystal quality by introducing an in-situ deposited SiNx interlayer. It acts as a nanomask which results in termination of the dislocations near the interface between the nanomask and epilayer. The epilayers with no SiNx interlayer have ...

Characteristics of a diffusion-bonded sapphire cell for optical experiments with hot metal vapors were investigated. The sapphire cell consisted of sapphire-crystal plates and a borosilicate-glass tube, which were bonded to each other by diffusion bonding without any binders or glues. The glass tube was attached to a vacuum manifold using the standard method applied in glass processing, filled ...

Well oriented vertical ZnO nanowires (NWs) are grown on c-plane sapphire via a vaporphase transport process using an Au thin film as a catalyst. This new finding is unexpected due to the fact that the lattice mismatch between the zinc oxide and the underlying substrate is 18%. Xray diffraction (XRD) analysis shows that single-crystal, wurtzite NWs grow in the [0001] direction normal to the basa...