A novel distributed window for output radiation from a high power 110 GHz gyrotron is made of thin slats of sapphire interleaved and brazed to hollow metal vanes. We report the results of electromagnetic theory and cold test of this distributed window. We calculate the frequency dependence of the reflectivity of a Gaussian beam from the window. The theory indicates a significant frequency shift...

IBA methods were applied to measure elemental depth profiles of precursors and superconducting MgB2 thin films deposited on glassy carbon (Good Fellows) and sapphire (Al2O3) substrates. For each type of substrates we obtained a pair of samples i.e. one amorphous precursor and one superconducting film which were then characterized. A He beam was used to bombard both, precursors and superconducti...

This article reports the design, the breadboarding, and the validation of an ultrastable cryogenic sapphire oscillator operated in an autonomous cryocooler. The objective of this project was to demonstrate the feasibility of a frequency stability of 3x10(-15) between 1 and 1000 s for the European Space Agency deep space stations. This represents the lowest fractional frequency instability ever ...

Titanium thin films were deposited on silicon nitride (SiNx) coated Si, NaCl, and sapphire substrates varying the deposition conditions using e-beam evaporation to investigate film growth modes. The microstructure texture evolution in dependence of substrate, rate, thickness, substrate temperature studied X-ray diffraction, electron backscatter transmission microscopy. Thin obtained SiNx NaCl n...

Near-field coupling between an excited atom and a surface-polariton mode can dramatically modify atomic branching ratios, because of surface-induced enhancement of a resonant decay channel. We show here that Cs(6D(3/2)) transfer towards Cs(7P(1/2)) (at lambda = 12.15 microm), negligible in free space, becomes efficient in the vicinity (< or =100 nm) of a sapphire window, due to a 12 microm reso...

This work reports a study on the temperature dependence of in-plane E and out-of-plane A1g Raman modes of single-layer (1L) and bi-layer (2L) MoS2 films on sapphire (epitaxial) and SiO2 (transferred) substrates as well as bulk MoS2 single crystals in a temperature range of 25-500 °C. For the films on the transferred SiO2 substrate, the in-plane E mode is only weakly affected by the substrate, w...