The bias stability of zinc-tin-oxide ZTO thin-film transistors TFTs with either Al2O3 gate dielectrics deposited via atomic layer deposition ALD or SiO2 gate dielectrics deposited via plasma-enhanced chemical vapor deposition PECVD was compared. Both device types showed incremental mobility 11 cm2 /V s, subthreshold slopes 0.4 V /dec, and ION / IOFF ratios of 107. During repeated ID-VGS sweepin...

Carbon containing zirconia films are deposited from chemical vapor deposition (CVD) and plasma enhanced (PECVD), as being used thermal barrier coatings for many applications. Their conductivity has been measured temperatures ranging room temperature up to 450 K using the 3 ω method. It is shown that samples exhibit a lattice an electronic contribution reaching values 13 W/m/K CVD 5 PECVD at K. ...

0026-2714/$ see front matter 2011 Elsevier Ltd. A doi:10.1016/j.microrel.2011.09.004 ⇑ Corresponding author at: Institut Femto-ST, U CNRS, 32 avenue de l’observatoire, F-25044 Besançon E-mail address: [email protected] (E. Her The aim of this work is to determine optimal deposition parameters of silicon nitride for optical applications. The authors present the investigation of hydrogena...

We present a powerful kinetic Monte Carlo (KMC) algorithm that allows one to simulate the growth of nanocrystalline silicon by plasma enhanced chemical vapor deposition (PECVD) for film thicknesses as large as several hundreds of monolayers. Our method combines a standard n-fold KMC algorithm with an efficient Markovian random walk scheme accounting for the surface diffusive processes of the sp...

This paper presents the preparation of high-quality vanadium dioxide (VO₂) thermochromic thin films with enhanced visible transmittance (Tvis) via radio frequency (RF) sputtering and plasma enhanced chemical vapor deposition (PECVD). VO₂ thin films with high Tvis and excellent optical switching efficiency (Eos) were successfully prepared by employing SiO₂ as a passivation layer. After SiO₂ depo...

The paper presents a novel pressure sensor based on a silicon nitride (SiNx) nanocoated long-period grating (LPG). The high-temperature, radio-frequency plasma-enhanced chemical-vapor-deposited (RF PECVD) SiNx nanocoating was applied to tune the sensitivity of the LPG to the external refractive index. The technique allows for deposition of good quality, hard and wear-resistant nanofilms as requ...

Silicon nanowires with high aspect ratio were grown using PPECVD and a gold catalyst on a variety of different substrates. The morphology of the nanowires was investigated for a range of crystalline silicon, glass, metal, ITO coated and amorphous silicon coated glass substrates. Deposition of the nanowires was carried out in a parallel plate PECVD chamber modified for PPECVD using a 1kHz square...

Organic–inorganic hybrid co-polymer thin films were deposited on silicon(100) substrates under the several ratio of TEOS (tetraethoxysilane) against cyclohexene by plasma enhanced chemical vapour deposition (PECVD) method. Toluene and TEOS were utilized as organic and inorganic precursors each, and hydrogen and argon were also used as a bubbler and carrier gases, respectively. In order to compa...