The effect of #110$ uniaxial stresses up to 1.5 GPa on defect nucleation during solid phase epitaxy of amorphous !001" Si created via ion implantation was examined. The solid phase epitaxial regrowth velocity was slowed in compression. However, in tension, the velocity was unaffected. Both compression and tension resulted in an increase in regrowth defects compared to the stress-free case. The ...
