TiO2 thin film was deposited on non-heated Si(1 0 0) substrate by RF magnetron sputtering. The as-deposited films were annealed by a conventional thermal annealing (CTA) and rapid thermal annealing (RTA) at 700 and 800 8C, and the effects of annealing temperature and method on optical properties of studied films were investigated by measuring the optical band gaps and FT-IR spectra. And we also...

This paper reports the recent progress on the development of double-cantilever infrared (IR) detectors, including the fabrication, the post-process urvature control, and also the first-time demonstration of thermal detection using capacitive-based IR focal plane arrays (FPAs). In this work, implified double-cantilever IR FPAs based on bimaterial SiNx/Al and Al/SiNx cantilevers are fabricated us...

Executive Summary This paper uses hourly data from industrial and commercial customers that volunteered to participate in Central and Southwest Service's (CSW) real-time pricing (RTP) programs to characterize the induced price response. The CSW RTP program, which adopted the two-part, revenue neutral design first introduced by Niagara Mohawk, was introduced to large commercial and industrial cu...

In this paper laser thermal processing ~LTP! is applied to induce the Ti silicide formation in replacement of rapid thermal annealing ~RTA! in narrow lines. Results show that the C40 TiSi2 is synthesized after LTP in both large and small features. With this interfacial C40 TiSi2 , the C54 TiSi2-phase formation temperature can be lowered by 100°C during subsequent annealing. The C40-C54-phase tr...

Using silicon MOSFETs with thin (5 nm) thermally grown SiO2 gate dielectrics, we characterize the density of electrically active traps at low temperature after 16 keV phosphorus ion implantation through the oxide. We find that, after rapid thermal annealing at 1000 ◦C for 5 s, each implanted P ion contributes an additional 0.08 ± 0.03 electrically active traps, whilst no increase in the number ...

The effect of high temperature annealing of the InAs/ InP quantum dots QDs containing a thin GaAs interlayer is investigated. The QDs are rapid thermally annealed at 750, 800, 850, and 900 °C for 30 s. The QDs with the GaAs interlayer show good thermal stability up to 850 °C as well as enhanced integrated photoluminescence PL intensity and reduced PL linewidth. The effect of high energy 450 keV...

We report a first work on nanofabrication of hydrogen nanosensor from single ZnO branched nanorods (tripod) using in-situ lift-out technique and performed in the chamber of focused ion beam (FIB) system. Self-assembled ZnO branched nanorod has been grown by a cost-effective and fast synthesis route using an aqueous solution method and rapid thermal processing. Their properties were analyzed by ...

GaInNAs/GaAs multiple quantum well (MQW) structures for long wavelength emission were grown by atmospheric pressure metalorganic vapor phase epitaxy using trimethylgallium, trimethylindium, tertiarybutylarsine and dimethylhydrazine precursors. The dependence of the N concentration and the emission wavelength on the In concentration was investigated. The longest wavelengths were obtained with In...

Using ZnO as a model system, the densification mechanisms of flash sintering are investigated. Controlled experiments via limiting the maximum current or the effective ramp rate suggest that both the maximum specimen temperature and the high heating rate (on the order of 200 C/s) are essential for the rapid densification during the flash sintering. Moreover, benchmarking rapid thermal annealing...