نتایج جستجو برای: rapid thermal annealing
تعداد نتایج: 537532 فیلتر نتایج به سال:
Band gap blue shift of InGaAs/InP multiple quantum well (MQW) structures by impurity-free vacancy disordering (IFVD) is studied by photoluminescence (PL) and secondary ion mass spectrum (SIMS). SiO2, Si3N4, and spin on glass (SOG) were used for the dielectric layers to create the vacancies. The results indicate that the band gap blue shift varies with the different dielectric layers and depends...
Bilayer Mg/Co and Mg/Mn (700nm) thin films were prepared using thermal evaporation method at pressure10 torr at room temperature. The films were rapid thermal annealed (RTA) using halogen lamp to get a homogeneous structure of thin films. The hydrogen gas was introduced in hydrogen chamber, where samples were kept at different pressure from 10 to 40 psi of H2 for thirty minutes. The conductivit...
The effects of rapid thermal annealing (RTA) on CdTe/Si (100) heterostructures have been studied in order to improve the structural quality of CdTe epilayers. Samples of CdTe (111) polycrystalline thin films grown by vapor phase epitaxy (VPE) on Si (100) substrates have been investigated. The strained structures were rapidly thermally annealed at 400°C, 450°C, 500°C, 550°C, and 600°C for 10 sec...
We have studied the effects of rapid thermal annealing at 1300 °C on GaN epilayers grown on AlN buffered Si 111 and on sapphire substrates. After annealing, the epilayers grown on Si display visible alterations with craterlike morphology scattered over the surface. The annealed GaN/Si layers were characterized by a range of experimental techniques: scanning electron microscopy, optical confocal...
We study thermal annealing effects on the size and composition variations of indium-aggregated clusters in two InGaN thin films with photoluminescence ͑PL͒ in the yellow and red ranges. The methods of investigation include optical measurement, nanoscale material analysis, and theoretical calculation. Such a study is important for determining the relation between the band gap and the average indiu...
Three samples of francophone subjects from Quebec (Canada) are used to establish the prevalence of parent-child RTP according to different personal, social and family variables, and to verify if children who engage in more RTP with their father exhibit less physical aggression towards other children and are more competitive without resorting to aggression. Our results showed that 24 to 43% of f...
Ohmic contacts to AlGaN/GaN heterostructures, which have low contact resistance and a good surface morphology, are required for the development of high temperature, high power and high frequency electronic devices. The paper presents the investigation of a Ti/Al based Ti/Al/Ni/Au ohmic contact to AlGaN/GaN heterostructures. Multilayer metallization of Ti/Al/Ni/Au was evaporated by an electron g...
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