Over the past two decades, the storage capacity and access bandwidth of main memory have improved tremendously, by 128x and 20x, respectively. These improvements are mainly due to the continuous technology scaling of DRAM (dynamic random-access memory), which has been used as the physical substrate for main memory. In stark contrast with capacity and bandwidth, DRAM latency has remained almost ...

STT-RAMs are good candidates to replace conventional SRAM cache and DRAM in main memory, but their applicability in digital logic circuits is unclear. Our experiments explore the power benefit of utilizing nonvolatile buffers in digital circuits, with a case study of Ripple Carry Adder and Carry-Skip Adder circuits. We design a low-overhead 2T1MTJ buffer and place it in the intermediate non-cri...

Existing techniques for approximate storage of visited states in a model checker are too special-purpose and too DRAM-intensive. Bitstate hashing, based on Bloom filters, is good for exploring most of very large state spaces, and hash compaction is good for high-assurance verification of more tractable problems. We describe a scheme that is good at both, because it adapts at run time to the num...

Random Access Memory (RAM) is an important device in computer system. It can represent the snapshot on how the computer has been used by the user. With the growth of its importance, the computer memory has been an issue that has been discussed in digital forensics. A number of tools have been developed to retrieve the information from the memory. However, most of the tools have their limitation...

Spin-Transfer Torque RAM (STTRAM) is promising for cache applications. However, it brings new data security issues that were absent in volatile memory counterparts such as Static RAM (SRAM) and embedded Dynamic RAM (eDRAM). This is primarily due to the fundamental dependency of this memory technology on ambient parameters such as magnetic field and temperature that can be exploited to tamper wi...

The goal of this paper is to review in brief the basic physics of nanoelectronic device single-electron transistor [SET] as well as prospective applications and problems in their applications. SET functioning based on the controllable transfer of single electrons between small conducting "islands". The device properties dominated by the quantum mechanical properties of matter and provide new ch...

Recent research in SET gives new ideas which are going to revolutionize the random access memory and digital data storage technologies. The goal of this paper is to discuss about the basic physics, applications of nano electronic device ‘Single electron transistor [SET]’ which is capable of controlling the transport of only one electron. Single-electron transistor (SET) is a key element of curr...

Row hammer attacks exploit electrical interactions between neighboring memory cells in high-density dynamic random-access memory (DRAM) to induce memory errors. By rapidly and repeatedly accessing DRAMs with specific patterns, an adversary with limited privilege on the target machine may trigger bit flips in memory regions that he has no permission to access directly. In this paper, we explore ...