GaN-based blue laser diodes (LDs) may exhibit anomalous temperature characteristics such as a very high characteristic temperature (T 0) or even negative T 0. In this work, temperature-dependent characteristics of GaN-based blue LDs with InGaN double quantum well (QW) structures were investigated using numerical simulations. The temperature-dependent threshold current is found to become increas...

In existing flip-chip LED simulations, the light extraction efficiency is related to multiple quantum well (MQW) metal reflector distance because of optical interference. We calculate contrast using several typical intensity distributions among QWs in MQW. The coherence obtained analytically. When luminosity each QW equal, ∼0, meaning incoherent, contrary traditional studies. spatial important ...

BACKGROUND There is an epidemic of chronic kidney disease (CKD) and a high prevalence of anemia (47%) observed in CKD patients. Little is known about the cost in physician office resources of routine erythropoiesis-stimulating protein (ESP) administration to treat patients with nondialysis CKD. OBJECTIVES The objectives of this research were (1) to explore the patterns of care in physician of...

Quantum-well (QW) states in nonmagnetic metal films between magnetic layers are known to be important in spin-dependent transport, but QW states in magnetic films remains elusive. Here we identify the conditions for resonant tunneling through QW states in magnetic films and report first principles calculations of Fe/MgO/FeO/Fe/Cr and Co/MgO/Fe/Cr. We show that, at resonance, the current increas...

Health technology A programme of financial incentives to promote smoking cessation was examined. The programme, the "Quit and Win" (QW) contest offered a chance to win a cash prize (usually $1,000) for successfully stopping smoking for at least 1 month. The current study reported on 11 QW contests that were carried out in different communities across New York State between 2001 and 2004. In the...

Proof. Suppose π̄ / ∈ Πm,n. Then ∃i, j1 < j2 such that π̄i,(j1)w < π̄i,(j2)w , i.e. such that π̄i,(j1)w = 0 and π̄i,(j2)w = 1. This means that π̄ ranks x + i above x−(j1)w but below x − (j2)w . Now let us construct from π̄ an ordering π̄ in which the instances x−(j1)w and x−(j2)w are swapped, i.e. for all i ′ with π̄i′,(j1)w = 0 and π̄i′,(j2)w = 1, we set π̄ ′ i′,(j1)w = 1 and π̄ i′,(j2)w = 0. Then it can ...

We report angle dependent and temperature dependent (9 K–300 K) photo-modulated reflectance (PR) studies on vertical-cavity surface-emitting laser (VCSEL) structures, designed for 2.3 lm mid-infrared gas sensing applications. Changing the temperature allows us to tune the energies of the quantum well (QW) transitions relative to the VCSEL cavity mode (CM) energy. These studies show that this VC...

The device and circuit performance of a 20 nm gate length InGaAs and Ge hybrid CMOS based on an implant free quantum well (QW) device architecture is studied using a multiscale approach combining ensemble Monte Carlo simulation, drift-diffusion simulation, compact modelling, and TCAD mixedmode circuit simulation. We have found that the QW and doped substrate, used in the hybrid CMOS, help to re...

Well-behaved Ge quantum well (QW) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) were fabricated on silicon-on-insulator (SOI) substrate. By optimizing the growth conditions, ultrathin fully strained Ge film was directly epitaxially grown on SOI at about 450 °C using ultra-high vacuum chemical vapor deposition. In situ Si2H6 passivation of Ge was utilized to form a high...

Aharonov-Bohm (AB) interference is reported for the first time in the conductance of a vertical nanostructure based on a single GaAs/AlGaAs quantum well (QW). The two lowest subbands of the well are spatially separated by the Hartree barrier originating from electronic repulsion in the modulation-doped QW and provide AB two-path geometry. Split-gates control the in-plane electronic momentum dis...