Generation of short optical pulses with semiconductor laser diodes is important for high bit rate time-division multiplexed communication systems, ultrafast data processing, and picosecond optoelectronic applications. Because the pulse shaping mechanisms are determined by the saturation and recovery time of the gain and absorber sections in mode-locked lasers,’ it is possible to generate short ...

In this letter the authors present a comprehensive study of the threshold current and its temperature dependence in GaAsSb-based quantum well edge-emitting lasers for emission at 1.3 m. It is found that at room temperature, the threshold current is dominated by nonradiative recombination accounting for more than 90% of the total threshold current density. From high hydrostatic pressure dependen...

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The temperature dependence of below-threshold emission from multiple quantum well semiconductor lasers is well characterized by a power law, in excellent agreement with Landau-Ginzburg theory of second-order phase transitions. We thereby show that it is the temperature dependence of net gain and not that of nonradiative recombination which primarily determines temperature sensitivity of thresho...

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