We demonstrate experimentally that the frequency resolved optical switching (FROSt) method is independent of polarization direction pulse to be characterized. In this perspective, it employed characterize two or three co-propagating pulses linearly polarized in orthogonal directions, enabling retrieve simultaneously their temporal intensity and phase profiles together with group delay. This tec...

Carbon/molecule/TiO2/Au molecular electronic junctions show robust conductance switching, in which a metastable high conductance state may be induced by a voltage pulse which results in redox reactions in the molecular and TiO2 layers. When Ag is substituted for Au as the "top contact", dramatically different current/voltage curves and switching behavior result. When the carbon substrate is bia...

Commercial multi-channel energy spectrometers have good performance, they multiple input signal channels and analyzers, which can simultaneously acquire the spectrum of nuclear pulse signals. But channel this general spectrometer cannot be switched between internal an only fixed to corresponding analyzers. Hence, resolve issue, paper designed a array switching circuit. The core circuit is switc...

In this article, the magnetic pulse characteristics needed to achieve high-speed magneto-optic (MO) switching are investigated. A fiber-based, MO, low-voltage optical switch capable of 200 ns switching is presented, along with the special circuit characteristics for magnetic field generation for high-speed switching. The switch consists of the optical system, the MO material (bismuth substitute...

The electric-pulse-induced resistance switching in layered structures composed of polycrystalline Pr1-xCaxMnO3 (PCMO) sandwiched between Pt bottom electrode and top electrodes of various metals (metal/PCMO/Pt) was studied by direct current current-voltage (I-V) measurements and alternating current impedance spectroscopy. The I-V characteristics showed nonlinear, asymmetric, and hysteretic behav...

The resistive switching characteristics and switching mechanisms of the Au-implanted-ZrO2 film are extensively investigated for nonvolatile memory applications. Reversible resistance-switching behavior from a high resistance to low resistance state can be traced by dc voltage and pulse voltage. After more than 200 dc switching cycles, the resistance ratio between the high and low resistance sta...